All MOSFET. ZXMN2A01E6TA Datasheet

 

ZXMN2A01E6TA Datasheet and Replacement


   Type Designator: ZXMN2A01E6TA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.21 nS
   Cossⓘ - Output Capacitance: 59 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT-23-6
 

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ZXMN2A01E6TA Datasheet (PDF)

 ..1. Size:198K  zetex
 zxmn2a01e6ta.pdf pdf_icon

ZXMN2A01E6TA

ZXMN2A01E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 3.1ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.SOT23-6FEATURES Low on-resistance

 3.1. Size:198K  zetex
 zxmn2a01e6tc.pdf pdf_icon

ZXMN2A01E6TA

ZXMN2A01E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 3.1ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.SOT23-6FEATURES Low on-resistance

 4.1. Size:199K  diodes
 zxmn2a01e6.pdf pdf_icon

ZXMN2A01E6TA

ZXMN2A01E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 3.1ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.SOT23-6FEATURES Low on-resistance

 6.1. Size:217K  diodes
 zxmn2a01f.pdf pdf_icon

ZXMN2A01E6TA

ZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

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Datasheet: ZXMN10A11GTC , ZXMN10A11KTC , ZXMN10A25GTA , ZXMN10A25KTC , ZXMN10B08E6TA , ZXMN10B08E6TC , ZXMN15A27KTC , ZXMN20B28KTC , IRF4905 , ZXMN2A01E6TC , ZXMN2A01FTA , ZXMN2A01FTC , ZXMN2A02N8TA , ZXMN2A02X8TA , ZXMN2A02X8TC , ZXMN2A03E6TA , ZXMN2A03E6TC .

History: DMN601DWK

Keywords - ZXMN2A01E6TA MOSFET datasheet

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