All MOSFET. ZXMN2A01E6TC Datasheet

 

ZXMN2A01E6TC Datasheet and Replacement


   Type Designator: ZXMN2A01E6TC
   Marking Code: 2A1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 3 nC
   tr ⓘ - Rise Time: 5.21 nS
   Cossⓘ - Output Capacitance: 59 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT-23-6
 

 ZXMN2A01E6TC substitution

   - MOSFET ⓘ Cross-Reference Search

 

ZXMN2A01E6TC Datasheet (PDF)

 ..1. Size:198K  zetex
 zxmn2a01e6tc.pdf pdf_icon

ZXMN2A01E6TC

ZXMN2A01E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 3.1ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.SOT23-6FEATURES Low on-resistance

 3.1. Size:198K  zetex
 zxmn2a01e6ta.pdf pdf_icon

ZXMN2A01E6TC

ZXMN2A01E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 3.1ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.SOT23-6FEATURES Low on-resistance

 4.1. Size:199K  diodes
 zxmn2a01e6.pdf pdf_icon

ZXMN2A01E6TC

ZXMN2A01E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 3.1ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.SOT23-6FEATURES Low on-resistance

 6.1. Size:217K  diodes
 zxmn2a01f.pdf pdf_icon

ZXMN2A01E6TC

ZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

SHOW MORE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Keywords - ZXMN2A01E6TC MOSFET datasheet

 ZXMN2A01E6TC cross reference
 ZXMN2A01E6TC equivalent finder
 ZXMN2A01E6TC lookup
 ZXMN2A01E6TC substitution
 ZXMN2A01E6TC replacement

 

 
Back to Top

 


 
.