All MOSFET. ZXMN2A03E6TA Datasheet

 

ZXMN2A03E6TA MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMN2A03E6TA
   Marking Code: 2A3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
   |Id|ⓘ - Maximum Drain Current: 3.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.2 nC
   trⓘ - Rise Time: 5.7 nS
   Cossⓘ - Output Capacitance: 168 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOT-23-6

 ZXMN2A03E6TA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN2A03E6TA Datasheet (PDF)

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