Справочник MOSFET. ZXMN2A03E6TA

 

ZXMN2A03E6TA Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMN2A03E6TA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5.7 ns
   Cossⓘ - Выходная емкость: 168 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm
   Тип корпуса: SOT-23-6
     - подбор MOSFET транзистора по параметрам

 

ZXMN2A03E6TA Datasheet (PDF)

 ..1. Size:196K  zetex
 zxmn2a03e6ta.pdf pdf_icon

ZXMN2A03E6TA

ZXMN2A03E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.055 ID = 4.6ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistan

 3.1. Size:196K  zetex
 zxmn2a03e6tc.pdf pdf_icon

ZXMN2A03E6TA

ZXMN2A03E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.055 ID = 4.6ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistan

 4.1. Size:197K  diodes
 zxmn2a03e6.pdf pdf_icon

ZXMN2A03E6TA

ZXMN2A03E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.055 ID = 4.6ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistan

 7.1. Size:179K  diodes
 zxmn2a04dn8.pdf pdf_icon

ZXMN2A03E6TA

ZXMN2A04DN8DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 20V; RDS(ON)= 0.025 ; ID= 7.7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURESSO8 Low on-resista

ПОКАЗАТЬ ЕЩЁ

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History: KP903A | IRF7842 | CHM3203CMGP | MS65R120C | SSM2305AGN | IPU80R750P7 | MEE7816S

 

 
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