ZXMN2B03E6TA Datasheet. Specs and Replacement

Type Designator: ZXMN2B03E6TA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.2 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SOT-23-6

ZXMN2B03E6TA substitution

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ZXMN2B03E6TA datasheet

 ..1. Size:582K  zetex
 zxmn2b03e6ta.pdf pdf_icon

ZXMN2B03E6TA

ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) ( )ID (A) 0.040 @ VGS= 4.5V 5.4 0.055 @ VGS= 2.5V 4.6 20 0.075 @ VGS= 1.8V 4.0 Description This new generation trench MOSFET from Zetex features low on- resistance achievable with low gate drive. Features D Low on-resistance Fast switching speed G Low ga... See More ⇒

 4.1. Size:585K  diodes
 zxmn2b03e6.pdf pdf_icon

ZXMN2B03E6TA

ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) ( )ID (A) 0.040 @ VGS= 4.5V 5.4 0.055 @ VGS= 2.5V 4.6 20 0.075 @ VGS= 1.8V 4.0 Description This new generation trench MOSFET from Zetex features low on- resistance achievable with low gate drive. Features D Low on-resistance Fast switching speed G Low ga... See More ⇒

 7.1. Size:391K  diodes
 zxmn2b01f.pdf pdf_icon

ZXMN2B03E6TA

ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) ( )ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 20 0.200 @ VGS= 1.8V 1.7 Description This new generation trench MOSFET from Zetex features low on- resistance achievable with low gate drive. Features D Low on-resistance Fast switching speed G Low gate ... See More ⇒

 7.2. Size:102K  tysemi
 zxmn2b01f.pdf pdf_icon

ZXMN2B03E6TA

Product specification ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) ( )ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 20 0.200 @ VGS= 1.8V 1.7 Description This new generation trench MOSFET from TY features low on- resistance achievable with low gate drive. Features D Low on-resistance Fast switching spe... See More ⇒

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Detailed specifications: ZXMN2A01FTC, ZXMN2A02N8TA, ZXMN2A02X8TA, ZXMN2A02X8TC, ZXMN2A03E6TA, ZXMN2A03E6TC, ZXMN2A14FTA, ZXMN2B01FTA, AO4407, ZXMN2B14FHTA, ZXMN2F30FHTA, ZXMN2F34FHTA, ZXMN2F34MATA, ZXMN3A01E6TA, ZXMN3A01E6TC, ZXMN3A01FTA, ZXMN3A01FTC

Keywords - ZXMN2B03E6TA MOSFET specs

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