All MOSFET. ZXMN2B03E6TA Datasheet

 

ZXMN2B03E6TA Datasheet and Replacement


   Type Designator: ZXMN2B03E6TA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 4.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6.2 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOT-23-6
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ZXMN2B03E6TA Datasheet (PDF)

 ..1. Size:582K  zetex
 zxmn2b03e6ta.pdf pdf_icon

ZXMN2B03E6TA

ZXMN2B03E620V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.040 @ VGS= 4.5V 5.40.055 @ VGS= 2.5V 4.6200.075 @ VGS= 1.8V 4.0DescriptionThis new generation trench MOSFET from Zetex features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching speedG Low ga

 4.1. Size:585K  diodes
 zxmn2b03e6.pdf pdf_icon

ZXMN2B03E6TA

ZXMN2B03E620V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.040 @ VGS= 4.5V 5.40.055 @ VGS= 2.5V 4.6200.075 @ VGS= 1.8V 4.0DescriptionThis new generation trench MOSFET from Zetex features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching speedG Low ga

 7.1. Size:391K  diodes
 zxmn2b01f.pdf pdf_icon

ZXMN2B03E6TA

ZXMN2B01F20V SOT23 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.100 @ VGS= 4.5V 2.40.150 @ VGS= 2.5V 2.0200.200 @ VGS= 1.8V 1.7DescriptionThis new generation trench MOSFET from Zetex features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching speedG Low gate

 7.2. Size:102K  tysemi
 zxmn2b01f.pdf pdf_icon

ZXMN2B03E6TA

Product specificationZXMN2B01F20V SOT23 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.100 @ VGS= 4.5V 2.40.150 @ VGS= 2.5V 2.0200.200 @ VGS= 1.8V 1.7DescriptionThis new generation trench MOSFET from TY features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching spe

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History: TPCA8058-H | 2SK4096LS | UT8205A | QM2410K | SFB082N75C2 | BUK7Y21-40E | WML11N80M3

Keywords - ZXMN2B03E6TA MOSFET datasheet

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