Справочник MOSFET. ZXMN2B03E6TA

 

ZXMN2B03E6TA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ZXMN2B03E6TA
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 1.1 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 8 V
   Максимально допустимый постоянный ток стока |Id|: 4.3 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 6.2 ns
   Выходная емкость (Cd): 210 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.04 Ohm
   Тип корпуса: SOT-23-6

 Аналог (замена) для ZXMN2B03E6TA

 

 

ZXMN2B03E6TA Datasheet (PDF)

 ..1. Size:582K  zetex
 zxmn2b03e6ta.pdf

ZXMN2B03E6TA ZXMN2B03E6TA

ZXMN2B03E620V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.040 @ VGS= 4.5V 5.40.055 @ VGS= 2.5V 4.6200.075 @ VGS= 1.8V 4.0DescriptionThis new generation trench MOSFET from Zetex features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching speedG Low ga

 4.1. Size:585K  diodes
 zxmn2b03e6.pdf

ZXMN2B03E6TA ZXMN2B03E6TA

ZXMN2B03E620V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.040 @ VGS= 4.5V 5.40.055 @ VGS= 2.5V 4.6200.075 @ VGS= 1.8V 4.0DescriptionThis new generation trench MOSFET from Zetex features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching speedG Low ga

 7.1. Size:391K  diodes
 zxmn2b01f.pdf

ZXMN2B03E6TA ZXMN2B03E6TA

ZXMN2B01F20V SOT23 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.100 @ VGS= 4.5V 2.40.150 @ VGS= 2.5V 2.0200.200 @ VGS= 1.8V 1.7DescriptionThis new generation trench MOSFET from Zetex features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching speedG Low gate

 7.2. Size:102K  tysemi
 zxmn2b01f.pdf

ZXMN2B03E6TA ZXMN2B03E6TA

Product specificationZXMN2B01F20V SOT23 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.100 @ VGS= 4.5V 2.40.150 @ VGS= 2.5V 2.0200.200 @ VGS= 1.8V 1.7DescriptionThis new generation trench MOSFET from TY features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching spe

 7.3. Size:381K  zetex
 zxmn2b01fta.pdf

ZXMN2B03E6TA ZXMN2B03E6TA

ZXMN2B01F20V SOT23 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.100 @ VGS= 4.5V 2.40.150 @ VGS= 2.5V 2.0200.200 @ VGS= 1.8V 1.7DescriptionThis new generation trench MOSFET from Zetex features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching speedG Low gate

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