ZXMN3A02N8TA Datasheet. Specs and Replacement

Type Designator: ZXMN3A02N8TA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.5 nS

Cossⓘ - Output Capacitance: 209 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SO-8

ZXMN3A02N8TA substitution

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ZXMN3A02N8TA datasheet

 ..1. Size:179K  zetex
 zxmn3a02n8ta.pdf pdf_icon

ZXMN3A02N8TA

ZXMN3A02N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.025 ID = 9.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistance ... See More ⇒

 4.1. Size:180K  diodes
 zxmn3a02n8.pdf pdf_icon

ZXMN3A02N8TA

ZXMN3A02N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.025 ID = 9.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistance ... See More ⇒

 6.1. Size:454K  diodes
 zxmn3a02x8.pdf pdf_icon

ZXMN3A02N8TA

ZXMN3A02X8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.025 ID=6.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast sw... See More ⇒

 6.2. Size:453K  zetex
 zxmn3a02x8ta.pdf pdf_icon

ZXMN3A02N8TA

ZXMN3A02X8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.025 ID=6.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast sw... See More ⇒

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Detailed specifications: ZXMN2F30FHTA, ZXMN2F34FHTA, ZXMN2F34MATA, ZXMN3A01E6TA, ZXMN3A01E6TC, ZXMN3A01FTA, ZXMN3A01FTC, ZXMN3A01Z, AO3407, ZXMN3A02X8TA, ZXMN3A02X8TC, ZXMN3A03E6TA, ZXMN3A03E6TC, ZXMN3A04KTC, ZXMN3A14FTA, ZXMN3B01FTA, ZXMN3B04N8TA

Keywords - ZXMN3A02N8TA MOSFET specs

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