Справочник MOSFET. ZXMN3A02N8TA

 

ZXMN3A02N8TA Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMN3A02N8TA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.56 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5.5 ns
   Cossⓘ - Выходная емкость: 209 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
   Тип корпуса: SO-8
     - подбор MOSFET транзистора по параметрам

 

ZXMN3A02N8TA Datasheet (PDF)

 ..1. Size:179K  zetex
 zxmn3a02n8ta.pdf pdf_icon

ZXMN3A02N8TA

ZXMN3A02N830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.025 ID = 9.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low on-resistance

 4.1. Size:180K  diodes
 zxmn3a02n8.pdf pdf_icon

ZXMN3A02N8TA

ZXMN3A02N830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.025 ID = 9.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low on-resistance

 6.1. Size:454K  diodes
 zxmn3a02x8.pdf pdf_icon

ZXMN3A02N8TA

ZXMN3A02X830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=30V; RDS(ON)=0.025 ID=6.7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.FEATURES Low on-resistance Fast sw

 6.2. Size:453K  zetex
 zxmn3a02x8ta.pdf pdf_icon

ZXMN3A02N8TA

ZXMN3A02X830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=30V; RDS(ON)=0.025 ID=6.7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.FEATURES Low on-resistance Fast sw

ПОКАЗАТЬ ЕЩЁ

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History: ZVP0535A

 

 
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