ZXMN3A14FTA Datasheet and Replacement
Type Designator: ZXMN3A14FTA
Marking Code: 314
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id| ⓘ - Maximum Drain Current: 3.2
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Qg ⓘ - Total Gate Charge: 9
nC
tr ⓘ - Rise Time: 2.5
nS
Cossⓘ -
Output Capacitance: 82
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065
Ohm
Package:
SOT-23
-
MOSFET ⓘ Cross-Reference Search
ZXMN3A14FTA Datasheet (PDF)
..1. Size:274K diodes
zxmn3a14fta.pdf 
A Product Line ofDiodes IncorporatedZXMN3A14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceMax ID Fast switching speed BVDSS Max RDS(on) TA = 25C Low gate charge (Note 4) Low threshold Totally Lead-Free & Fully RoHS compliant (Note 1) 65m @ VGS = 10V 3.2A Halogen and Antimony Free. Green
5.1. Size:215K diodes
zxmn3a14f.pdf
ZXMN3A14F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=30V : RDS(on)=0.065 ; ID=3.9ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.FEATURESSOT23 Low on-resistance
5.2. Size:194K tysemi
zxmn3a14f.pdf
Product specification ZXMN3A14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceMax ID Fast switching speed BVDSS Max RDS(on) TA = 25C Low gate charge (Note 4) Low threshold Totally Lead-Free & Fully RoHS compliant (Note 1) 65m @ VGS = 10V 3.2A Halogen and Antimony Free. Green Device (Note 2
8.1. Size:180K diodes
zxmn3a02n8.pdf
ZXMN3A02N830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.025 ID = 9.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low on-resistance
8.2. Size:150K diodes
zxmn3a04k.pdf
ZXMN3A04K30V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAKSUMMARYV(BR)DSS=30V : RDS(on)=0.02 ; ID=18.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetexutilizes a unique structure that combines the benefits oflow on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltagepower management applications.FEATURESDPAK Low on-resista
8.3. Size:242K diodes
zxmn3a01z.pdf
A Product Line of Diodes IncorporatedZXMN3A01Z 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-ResistanceID max Low ThresholdV(BR)DSS RDS(on) Max TA = 25C (Note 5) Fast Switching Speed Low Gate Drive 120m @ VGS = 10V 3.3A Lead Free/RoHS Compliant (Note 1) 30V 180m @ VGS = 4.5V 2.7A
8.4. Size:188K diodes
zxmn3a04dn8.pdf
ZXMN3A04DN8DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 30V; RDS(ON)= 0.02 ; ID= 8.5ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURESSO8 Low on-resistan
8.5. Size:187K diodes
zxmn3a06dn8.pdf
ZXMN3A06DN8DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 30V; RDS(ON)= 0.035 ; ID= 6.2ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURESSO8 Low on-resista
8.6. Size:191K diodes
zxmn3a03e6.pdf
ZXMN3A03E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.050 ID = 4.6ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistan
8.7. Size:193K diodes
zxmn3a01f.pdf
ZXMN3A01F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance
8.8. Size:454K diodes
zxmn3a02x8.pdf
ZXMN3A02X830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=30V; RDS(ON)=0.025 ID=6.7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.FEATURES Low on-resistance Fast sw
8.9. Size:654K diodes
zxmn3amc.pdf
A Product Line ofDiodes IncorporatedZXMN3AMC30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low profile package, for thin applications ID max Low RJA, thermally efficient package V(BR)DSS RDS(on) max TA = 25C 6mm2 footprint, 50% smaller than TSOP6 and SOT23-6 (Notes 4 & 7) Low on-resistance Fast switching speed
8.10. Size:561K diodes
zxmn3am832.pdf
OBSOLETE - PLEASE USE ZXMN3AMCTAZXMN3AM832MPPS Miniature Package Power SolutionsDUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ; ID= 3ADESCRIPTIONPackaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)outline this dual 30V N channel Trench MOSFET utilizes a unique structurecombining the benefits of Low on-resistance with fast swit
8.11. Size:225K diodes
zxmn3a01e6.pdf
ZXMN3A01E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistanc
8.12. Size:104K tysemi
zxmn3a01f.pdf
Product specificationZXMN3A01F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from TY utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT23
8.13. Size:224K zetex
zxmn3a01e6tc.pdf
ZXMN3A01E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistanc
8.14. Size:189K zetex
zxmn3a03e6ta.pdf
ZXMN3A03E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.050 ID = 4.6ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistan
8.15. Size:191K zetex
zxmn3a01ftc.pdf
ZXMN3A01F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance
8.16. Size:148K zetex
zxmn3a04ktc.pdf
ZXMN3A04K30V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAKSUMMARYV(BR)DSS=30V : RDS(on)=0.02 ; ID=18.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetexutilizes a unique structure that combines the benefits oflow on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltagepower management applications.FEATURESDPAK Low on-resista
8.17. Size:453K zetex
zxmn3a02x8ta.pdf
ZXMN3A02X830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=30V; RDS(ON)=0.025 ID=6.7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.FEATURES Low on-resistance Fast sw
8.18. Size:191K zetex
zxmn3a01fta.pdf
ZXMN3A01F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance
8.19. Size:179K zetex
zxmn3a02n8ta.pdf
ZXMN3A02N830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.025 ID = 9.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low on-resistance
8.20. Size:189K zetex
zxmn3a03e6tc.pdf
ZXMN3A03E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.050 ID = 4.6ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistan
8.21. Size:224K zetex
zxmn3a01e6ta.pdf
ZXMN3A01E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistanc
8.22. Size:453K zetex
zxmn3a02x8tc.pdf
ZXMN3A02X830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=30V; RDS(ON)=0.025 ID=6.7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.FEATURES Low on-resistance Fast sw
Datasheet: ZXMN3A01FTC
, ZXMN3A01Z
, ZXMN3A02N8TA
, ZXMN3A02X8TA
, ZXMN3A02X8TC
, ZXMN3A03E6TA
, ZXMN3A03E6TC
, ZXMN3A04KTC
, AON6380
, ZXMN3B01FTA
, ZXMN3B04N8TA
, ZXMN3B04N8TC
, ZXMN3B14FTA
, ZXMN3F30FHTA
, ZXMN4A06GQ
, ZXMN4A06GTA
, ZXMN4A06KTC
.
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