ZXMN3A14FTA - Даташиты. Аналоги. Основные параметры
Наименование производителя: ZXMN3A14FTA
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 1
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 3.2
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 2.5
ns
Cossⓘ - Выходная емкость: 82
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.065
Ohm
Тип корпуса:
SOT-23
Аналог (замена) для ZXMN3A14FTA
ZXMN3A14FTA Datasheet (PDF)
5.2. Size:194K tysemi
zxmn3a14f.pdf 
Product specification ZXMN3A14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance Max ID Fast switching speed BVDSS Max RDS(on) TA = 25 C Low gate charge (Note 4) Low threshold Totally Lead-Free & Fully RoHS compliant (Note 1) 65m @ VGS = 10V 3.2A Halogen and Antimony Free. Green Device (Note 2
8.1. Size:180K diodes
zxmn3a02n8.pdf 
ZXMN3A02N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.025 ID = 9.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistance
8.2. Size:150K diodes
zxmn3a04k.pdf 
ZXMN3A04K 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK SUMMARY V(BR)DSS=30V RDS(on)=0.02 ; ID=18.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. FEATURES DPAK Low on-resista
8.3. Size:242K diodes
zxmn3a01z.pdf 
A Product Line of Diodes Incorporated ZXMN3A01Z 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-Resistance ID max Low Threshold V(BR)DSS RDS(on) Max TA = 25 C (Note 5) Fast Switching Speed Low Gate Drive 120m @ VGS = 10V 3.3A Lead Free/RoHS Compliant (Note 1) 30V 180m @ VGS = 4.5V 2.7A
8.4. Size:188K diodes
zxmn3a04dn8.pdf 
ZXMN3A04DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 30V; RDS(ON)= 0.02 ; ID= 8.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SO8 Low on-resistan
8.5. Size:187K diodes
zxmn3a06dn8.pdf 
ZXMN3A06DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 30V; RDS(ON)= 0.035 ; ID= 6.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SO8 Low on-resista
8.6. Size:191K diodes
zxmn3a03e6.pdf 
ZXMN3A03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.050 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistan
8.8. Size:454K diodes
zxmn3a02x8.pdf 
ZXMN3A02X8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.025 ID=6.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast sw
8.9. Size:654K diodes
zxmn3amc.pdf 
A Product Line of Diodes Incorporated ZXMN3AMC 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low profile package, for thin applications ID max Low R JA, thermally efficient package V(BR)DSS RDS(on) max TA = 25 C 6mm2 footprint, 50% smaller than TSOP6 and SOT23-6 (Notes 4 & 7) Low on-resistance Fast switching speed
8.10. Size:561K diodes
zxmn3am832.pdf 
OBSOLETE - PLEASE USE ZXMN3AMCTA ZXMN3AM832 MPPS Miniature Package Power Solutions DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ; ID= 3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure combining the benefits of Low on-resistance with fast swit
8.11. Size:225K diodes
zxmn3a01e6.pdf 
ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistanc
8.12. Size:104K tysemi
zxmn3a01f.pdf 
Product specification ZXMN3A01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0A DESCRIPTION This new generation of TRENCH MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23
8.13. Size:224K zetex
zxmn3a01e6tc.pdf 
ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistanc
8.14. Size:189K zetex
zxmn3a03e6ta.pdf 
ZXMN3A03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.050 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistan
8.16. Size:148K zetex
zxmn3a04ktc.pdf 
ZXMN3A04K 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK SUMMARY V(BR)DSS=30V RDS(on)=0.02 ; ID=18.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. FEATURES DPAK Low on-resista
8.17. Size:453K zetex
zxmn3a02x8ta.pdf 
ZXMN3A02X8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.025 ID=6.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast sw
8.19. Size:179K zetex
zxmn3a02n8ta.pdf 
ZXMN3A02N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.025 ID = 9.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistance
8.20. Size:189K zetex
zxmn3a03e6tc.pdf 
ZXMN3A03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.050 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistan
8.21. Size:224K zetex
zxmn3a01e6ta.pdf 
ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistanc
8.22. Size:453K zetex
zxmn3a02x8tc.pdf 
ZXMN3A02X8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.025 ID=6.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast sw
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