All MOSFET. ZXMN3B04N8TA Datasheet

 

ZXMN3B04N8TA MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMN3B04N8TA
   Marking Code: ZXMN3B04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
   |Id|ⓘ - Maximum Drain Current: 7.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23.1 nC
   trⓘ - Rise Time: 11.5 nS
   Cossⓘ - Output Capacitance: 318 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SO-8

 ZXMN3B04N8TA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN3B04N8TA Datasheet (PDF)

 ..1. Size:165K  zetex
 zxmn3b04n8ta.pdf

ZXMN3B04N8TA ZXMN3B04N8TA

ZXMN3B04N830V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.025 ; ID= 8.9ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low o

 3.1. Size:165K  zetex
 zxmn3b04n8tc.pdf

ZXMN3B04N8TA ZXMN3B04N8TA

ZXMN3B04N830V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.025 ; ID= 8.9ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low o

 4.1. Size:166K  diodes
 zxmn3b04n8.pdf

ZXMN3B04N8TA ZXMN3B04N8TA

ZXMN3B04N830V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.025 ; ID= 8.9ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low o

 7.1. Size:469K  diodes
 zxmn3b01f.pdf

ZXMN3B04N8TA ZXMN3B04N8TA

ZXMN3B01F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.15 ; ID=2ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-re

 7.2. Size:91K  tysemi
 zxmn3b01f.pdf

ZXMN3B04N8TA ZXMN3B04N8TA

Product specificationZXMN3B01F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.15 ; ID=2ADESCRIPTIONThis new generation of Trench MOSFETs from Ty utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURES

 7.3. Size:468K  zetex
 zxmn3b01fta.pdf

ZXMN3B04N8TA ZXMN3B04N8TA

ZXMN3B01F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.15 ; ID=2ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-re

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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