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ZXMN3B04N8TA Spec and Replacement


   Type Designator: ZXMN3B04N8TA
   Marking Code: ZXMN3B04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
   |Id| ⓘ - Maximum Drain Current: 7.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 23.1 nC
   tr ⓘ - Rise Time: 11.5 nS
   Cossⓘ - Output Capacitance: 318 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SO-8

 ZXMN3B04N8TA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN3B04N8TA Specs

 ..1. Size:165K  zetex
 zxmn3b04n8ta.pdf pdf_icon

ZXMN3B04N8TA

ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V RDS(on)=0.025 ; ID= 8.9A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low o... See More ⇒

 3.1. Size:165K  zetex
 zxmn3b04n8tc.pdf pdf_icon

ZXMN3B04N8TA

ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V RDS(on)=0.025 ; ID= 8.9A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low o... See More ⇒

 4.1. Size:166K  diodes
 zxmn3b04n8.pdf pdf_icon

ZXMN3B04N8TA

ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V RDS(on)=0.025 ; ID= 8.9A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low o... See More ⇒

 7.1. Size:469K  diodes
 zxmn3b01f.pdf pdf_icon

ZXMN3B04N8TA

ZXMN3B01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V RDS(on)=0.15 ; ID=2A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 Low on-re... See More ⇒

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Detailed specifications: ZXMN3A02N8TA , ZXMN3A02X8TA , ZXMN3A02X8TC , ZXMN3A03E6TA , ZXMN3A03E6TC , ZXMN3A04KTC , ZXMN3A14FTA , ZXMN3B01FTA , 8N60 , ZXMN3B04N8TC , ZXMN3B14FTA , ZXMN3F30FHTA , ZXMN4A06GQ , ZXMN4A06GTA , ZXMN4A06KTC , ZXMN6A07FTA , ZXMN6A07FTC .

Keywords - ZXMN3B04N8TA MOSFET specs

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