Справочник MOSFET. ZXMN3B04N8TA

 

ZXMN3B04N8TA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ZXMN3B04N8TA
   Маркировка: ZXMN3B04
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 2 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
   Пороговое напряжение включения |Ugs(th)|: 0.7 V
   Максимально допустимый постоянный ток стока |Id|: 7.2 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 23.1 nC
   Время нарастания (tr): 11.5 ns
   Выходная емкость (Cd): 318 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.025 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для ZXMN3B04N8TA

 

 

ZXMN3B04N8TA Datasheet (PDF)

 ..1. Size:165K  zetex
 zxmn3b04n8ta.pdf

ZXMN3B04N8TA ZXMN3B04N8TA

ZXMN3B04N830V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.025 ; ID= 8.9ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low o

 3.1. Size:165K  zetex
 zxmn3b04n8tc.pdf

ZXMN3B04N8TA ZXMN3B04N8TA

ZXMN3B04N830V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.025 ; ID= 8.9ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low o

 4.1. Size:166K  diodes
 zxmn3b04n8.pdf

ZXMN3B04N8TA ZXMN3B04N8TA

ZXMN3B04N830V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.025 ; ID= 8.9ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low o

 7.1. Size:469K  diodes
 zxmn3b01f.pdf

ZXMN3B04N8TA ZXMN3B04N8TA

ZXMN3B01F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.15 ; ID=2ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-re

 7.2. Size:91K  tysemi
 zxmn3b01f.pdf

ZXMN3B04N8TA ZXMN3B04N8TA

Product specificationZXMN3B01F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.15 ; ID=2ADESCRIPTIONThis new generation of Trench MOSFETs from Ty utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURES

 7.3. Size:468K  zetex
 zxmn3b01fta.pdf

ZXMN3B04N8TA ZXMN3B04N8TA

ZXMN3B01F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.15 ; ID=2ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-re

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