ZXMN3B14FTA MOSFET. Datasheet pdf. Equivalent

   Type Designator: ZXMN3B14FTA
   Marking Code: 3B4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
   |Id|ⓘ - Maximum Drain Current: 2.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.7 nC
   trⓘ - Rise Time: 4.9 nS
   Cossⓘ - Output Capacitance: 101 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SOT-23

ZXMN3B14FTA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

ZXMN3B14FTA Datasheet (PDF)

..1. Size:215K zetex
zxmn3b14fta.pdf

ZXMN3B14F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.08 ; ID=3.5ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESPACKAGE Low o

5.1. Size:217K diodes
zxmn3b14f.pdf

5.2. Size:79K tysemi
zxmn3b14f.pdf

Product specificationZXMN3B14F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.08 ; ID=3.5ADESCRIPTIONThis new generation of Trench MOSFETs from Ty utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURES

8.1. Size:469K diodes
zxmn3b01f.pdf

ZXMN3B01F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.15 ; ID=2ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-re

8.2. Size:166K diodes
zxmn3b04n8.pdf

ZXMN3B04N830V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.025 ; ID= 8.9ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low o

8.3. Size:91K tysemi
zxmn3b01f.pdf

Product specificationZXMN3B01F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.15 ; ID=2ADESCRIPTIONThis new generation of Trench MOSFETs from Ty utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURES

8.4. Size:165K zetex
zxmn3b04n8ta.pdf