ZXMN3B14FTA - параметры транзистора MOSFET, его аналоги, datasheet

ZXMN3B14FTA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: ZXMN3B14FTA
   Маркировка: 3B4
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 1 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
   Пороговое напряжение включения |Ugs(th)|: 0.7 V
   Максимально допустимый постоянный ток стока |Id|: 2.9 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 6.7 nC
   Время нарастания (tr): 4.9 ns
   Выходная емкость (Cd): 101 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.08 Ohm
   Тип корпуса: SOT-23

Аналог (замена) для ZXMN3B14FTA

ZXMN3B14FTA Datasheet (PDF)

..1. Size:215K zetex
zxmn3b14fta.pdf

ZXMN3B14F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.08 ; ID=3.5ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESPACKAGE Low o

5.1. Size:217K diodes
zxmn3b14f.pdf

5.2. Size:79K tysemi
zxmn3b14f.pdf

Product specificationZXMN3B14F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.08 ; ID=3.5ADESCRIPTIONThis new generation of Trench MOSFETs from Ty utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURES

8.1. Size:469K diodes
zxmn3b01f.pdf

ZXMN3B01F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.15 ; ID=2ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-re

8.2. Size:166K diodes
zxmn3b04n8.pdf

ZXMN3B04N830V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.025 ; ID= 8.9ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low o

8.3. Size:91K tysemi
zxmn3b01f.pdf

Product specificationZXMN3B01F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.15 ; ID=2ADESCRIPTIONThis new generation of Trench MOSFETs from Ty utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURES

8.4. Size:165K zetex
zxmn3b04n8ta.pdf