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ZXMN3F30FHTA Spec and Replacement


   Type Designator: ZXMN3F30FHTA
   Marking Code: KNA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.95 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 7.7 nC
   tr ⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
   Package: SOT-23

 ZXMN3F30FHTA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN3F30FHTA Specs

 ..1. Size:408K  zetex
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ZXMN3F30FHTA

ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with 4.5V gate drive. Features D Low on-resistance 4.5V gate drive capability SOT23 G Applications S DC-DC Converters Power m... See More ⇒

 4.1. Size:411K  diodes
zxmn3f30fh.pdf pdf_icon

ZXMN3F30FHTA

ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with 4.5V gate drive. Features D Low on-resistance 4.5V gate drive capability SOT23 G Applications S DC-DC Converters Power m... See More ⇒

 4.2. Size:106K  tysemi
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ZXMN3F30FHTA

Product specification ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from TY features low on- resistance achievable with 4.5V gate drive. Features D Low on-resistance 4.5V gate drive capability SOT23 G Applications S DC-DC Con... See More ⇒

 4.3. Size:1447K  cn vbsemi
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ZXMN3F30FHTA

ZXMN3F30FH www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) ... See More ⇒

Detailed specifications: ZXMN3A03E6TA , ZXMN3A03E6TC , ZXMN3A04KTC , ZXMN3A14FTA , ZXMN3B01FTA , ZXMN3B04N8TA , ZXMN3B04N8TC , ZXMN3B14FTA , AO3400A , ZXMN4A06GQ , ZXMN4A06GTA , ZXMN4A06KTC , ZXMN6A07FTA , ZXMN6A07FTC , ZXMN6A07ZTA , ZXMN6A08E6Q , ZXMN6A08E6TA .

History: ZXMN4A06GQ

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