ZXMN3F30FHTA
MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXMN3F30FHTA
Marking Code: KNA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.95
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 3.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7.7
nC
trⓘ - Rise Time: 2.6
nS
Cossⓘ -
Output Capacitance: 75
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.047
Ohm
Package:
SOT-23
ZXMN3F30FHTA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXMN3F30FHTA
Datasheet (PDF)
..1. Size:408K zetex
zxmn3f30fhta.pdf
ZXMN3F30FH30V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)30 0.047 @ VGS= 10V 4.60.065 @ VGS= 4.5V 4.0DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with 4.5V gate drive.FeaturesD Low on-resistance 4.5V gate drive capability SOT23GApplicationsS DC-DC Converters Power m
4.1. Size:411K diodes
zxmn3f30fh.pdf
ZXMN3F30FH30V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)30 0.047 @ VGS= 10V 4.60.065 @ VGS= 4.5V 4.0DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with 4.5V gate drive.FeaturesD Low on-resistance 4.5V gate drive capability SOT23GApplicationsS DC-DC Converters Power m
4.2. Size:106K tysemi
zxmn3f30fh.pdf
Product specificationZXMN3F30FH30V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)30 0.047 @ VGS= 10V 4.60.065 @ VGS= 4.5V 4.0DescriptionThis new generation Trench MOSFET from TY features low on-resistance achievable with 4.5V gate drive.FeaturesD Low on-resistance 4.5V gate drive capability SOT23GApplicationsS DC-DC Con
4.3. Size:1447K cn vbsemi
zxmn3f30fh.pdf
ZXMN3F30FHwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)
Datasheet: WPB4002
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