ZXMN3F30FHTA Spec and Replacement
Type Designator: ZXMN3F30FHTA
Marking Code: KNA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.95 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 3.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 7.7 nC
tr ⓘ - Rise Time: 2.6 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
Package: SOT-23
ZXMN3F30FHTA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXMN3F30FHTA Specs
zxmn3f30fhta.pdf
ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with 4.5V gate drive. Features D Low on-resistance 4.5V gate drive capability SOT23 G Applications S DC-DC Converters Power m... See More ⇒
zxmn3f30fh.pdf
ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with 4.5V gate drive. Features D Low on-resistance 4.5V gate drive capability SOT23 G Applications S DC-DC Converters Power m... See More ⇒
zxmn3f30fh.pdf
Product specification ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from TY features low on- resistance achievable with 4.5V gate drive. Features D Low on-resistance 4.5V gate drive capability SOT23 G Applications S DC-DC Con... See More ⇒
zxmn3f30fh.pdf
ZXMN3F30FH www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) ... See More ⇒
Detailed specifications: ZXMN3A03E6TA , ZXMN3A03E6TC , ZXMN3A04KTC , ZXMN3A14FTA , ZXMN3B01FTA , ZXMN3B04N8TA , ZXMN3B04N8TC , ZXMN3B14FTA , AO3400A , ZXMN4A06GQ , ZXMN4A06GTA , ZXMN4A06KTC , ZXMN6A07FTA , ZXMN6A07FTC , ZXMN6A07ZTA , ZXMN6A08E6Q , ZXMN6A08E6TA .
History: ZXMN4A06GQ
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History: ZXMN4A06GQ
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