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ZXMN3F30FHTA Datasheet and Replacement


   Type Designator: ZXMN3F30FHTA
   Marking Code: KNA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.95 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 7.7 nC
   tr ⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
   Package: SOT-23
 

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ZXMN3F30FHTA Datasheet (PDF)

 ..1. Size:408K  zetex
 zxmn3f30fhta.pdf pdf_icon

ZXMN3F30FHTA

ZXMN3F30FH30V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)30 0.047 @ VGS= 10V 4.60.065 @ VGS= 4.5V 4.0DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with 4.5V gate drive.FeaturesD Low on-resistance 4.5V gate drive capability SOT23GApplicationsS DC-DC Converters Power m

 4.1. Size:411K  diodes
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ZXMN3F30FHTA

ZXMN3F30FH30V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)30 0.047 @ VGS= 10V 4.60.065 @ VGS= 4.5V 4.0DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with 4.5V gate drive.FeaturesD Low on-resistance 4.5V gate drive capability SOT23GApplicationsS DC-DC Converters Power m

 4.2. Size:106K  tysemi
 zxmn3f30fh.pdf pdf_icon

ZXMN3F30FHTA

Product specificationZXMN3F30FH30V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)30 0.047 @ VGS= 10V 4.60.065 @ VGS= 4.5V 4.0DescriptionThis new generation Trench MOSFET from TY features low on-resistance achievable with 4.5V gate drive.FeaturesD Low on-resistance 4.5V gate drive capability SOT23GApplicationsS DC-DC Con

 4.3. Size:1447K  cn vbsemi
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ZXMN3F30FHTA

ZXMN3F30FHwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

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