ZXMN4A06GQ Datasheet. Specs and Replacement

Type Designator: ZXMN4A06GQ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.8 nS

Cossⓘ - Output Capacitance: 93 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOT-223

ZXMN4A06GQ substitution

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ZXMN4A06GQ datasheet

 ..1. Size:376K  diodes
 zxmn4a06gq.pdf pdf_icon

ZXMN4A06GQ

ZXMN4A06GQ Green 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(ON) TA = +25 C Fast Switching Speed 40V 0.05 @ VGS = 10V 7A Low Threshold Low Gate Drive Description Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET... See More ⇒

 5.1. Size:168K  diodes
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ZXMN4A06GQ

ZXMN4A06G 40V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 40V; RDS(ON)= 0.05 ID= 7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT223 Low on-resistance F... See More ⇒

 5.2. Size:167K  zetex
 zxmn4a06gta.pdf pdf_icon

ZXMN4A06GQ

ZXMN4A06G 40V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 40V; RDS(ON)= 0.05 ID= 7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT223 Low on-resistance F... See More ⇒

 5.3. Size:946K  cn vbsemi
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ZXMN4A06GQ

ZXMN4A06GT www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs 60 0.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET... See More ⇒

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Detailed specifications: ZXMN3A03E6TC, ZXMN3A04KTC, ZXMN3A14FTA, ZXMN3B01FTA, ZXMN3B04N8TA, ZXMN3B04N8TC, ZXMN3B14FTA, ZXMN3F30FHTA, IRFB31N20D, ZXMN4A06GTA, ZXMN4A06KTC, ZXMN6A07FTA, ZXMN6A07FTC, ZXMN6A07ZTA, ZXMN6A08E6Q, ZXMN6A08E6TA, ZXMN6A08E6TC

Keywords - ZXMN4A06GQ MOSFET specs

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