ZXMN6A07ZTA MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXMN6A07ZTA
Marking Code: 7N6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 1.9 A
Qgⓘ - Total Gate Charge: 3.2 nC
trⓘ - Rise Time: 1.4 nS
Cossⓘ - Output Capacitance: 19.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SOT-89
ZXMN6A07ZTA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXMN6A07ZTA Datasheet (PDF)
zxmn6a07zta.pdf
ZXMN6A07Z60V SOT89 N-channel enhancement mode mosfetSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 2.5600.350 @ VGS= 4.5V 2.1DescriptionDThis new generation trench MOSFET from Zetex utilizes a uniquestructure combining the benefits of low on-state resistance with fastswitching speed.GFeaturesS Low on-resistance Fast switching speed Low thresholdS
zxmn6a07zta.pdf
ZXMN6A07ZTAwww.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwi
zxmn6a07z.pdf
ZXMN6A07Z60V SOT89 N-channel enhancement mode mosfetSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 2.5600.350 @ VGS= 4.5V 2.1DescriptionDThis new generation trench MOSFET from Zetex utilizes a uniquestructure combining the benefits of low on-state resistance with fastswitching speed.GFeaturesS Low on-resistance Fast switching speed Low thresholdS
zxmn6a07f.pdf
ZXMN6A07F60V SOT23 N-channel enhancement mode mosfetSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 1.4600.350 @ VGS= 4.5V 1.2DescriptionDThis new generation trench MOSFET from Zetex utilizes a uniquestructure combining the benefits of low on-state resistance with fastswitching speed.GFeaturesS Low on-resistance Fast switching speed Low thresholdS
zxmn6a07fta.pdf
ZXMN6A07F60V SOT23 N-channel enhancement mode mosfetSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 1.4600.350 @ VGS= 4.5V 1.2DescriptionDThis new generation trench MOSFET from Zetex utilizes a uniquestructure combining the benefits of low on-state resistance with fastswitching speed.GFeaturesS Low on-resistance Fast switching speed Low thresholdS
zxmn6a07ftc.pdf
ZXMN6A07F60V SOT23 N-channel enhancement mode mosfetSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 1.4600.350 @ VGS= 4.5V 1.2DescriptionDThis new generation trench MOSFET from Zetex utilizes a uniquestructure combining the benefits of low on-state resistance with fastswitching speed.GFeaturesS Low on-resistance Fast switching speed Low thresholdS
zxmn6a07f.pdf
ZXMN6A07Fwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G
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