ZXMN6A07Z60V SOT89 N-channel enhancement mode mosfetSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 2.5600.350 @ VGS= 4.5V 2.1DescriptionDThis new generation trench MOSFET from Zetex utilizes a uniquestructure combining the benefits of low on-state resistance with fastswitching speed.GFeaturesS Low on-resistance Fast switching speed Low thresholdS

ZXMN6A07ZTAwww.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwi

ZXMN6A07Z60V SOT89 N-channel enhancement mode mosfetSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 2.5600.350 @ VGS= 4.5V 2.1DescriptionDThis new generation trench MOSFET from Zetex utilizes a uniquestructure combining the benefits of low on-state resistance with fastswitching speed.GFeaturesS Low on-resistance Fast switching speed Low thresholdS

ZXMN6A07F60V SOT23 N-channel enhancement mode mosfetSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 1.4600.350 @ VGS= 4.5V 1.2DescriptionDThis new generation trench MOSFET from Zetex utilizes a uniquestructure combining the benefits of low on-state resistance with fastswitching speed.GFeaturesS Low on-resistance Fast switching speed Low thresholdS

ZXMN6A07F60V SOT23 N-channel enhancement mode mosfetSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 1.4600.350 @ VGS= 4.5V 1.2DescriptionDThis new generation trench MOSFET from Zetex utilizes a uniquestructure combining the benefits of low on-state resistance with fastswitching speed.GFeaturesS Low on-resistance Fast switching speed Low thresholdS

ZXMN6A07F60V SOT23 N-channel enhancement mode mosfetSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 1.4600.350 @ VGS= 4.5V 1.2DescriptionDThis new generation trench MOSFET from Zetex utilizes a uniquestructure combining the benefits of low on-state resistance with fastswitching speed.GFeaturesS Low on-resistance Fast switching speed Low thresholdS

ZXMN6A07Fwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G