ZXMN6A08KTC
MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXMN6A08KTC
Marking Code: ZXMN6A08
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 8.94
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 7.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 3.8
nC
trⓘ - Rise Time: 2.1
nS
Cossⓘ -
Output Capacitance: 44.2
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08
Ohm
Package:
TO-252
ZXMN6A08KTC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXMN6A08KTC
Datasheet (PDF)
..1. Size:657K diodes
zxmn6a08ktc.pdf 
A Product Line ofDiodes IncorporatedZXMN6A08K60V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 80m @ VGS= 10V 7.90A 60V 150m @ VGS= 4.5V 5.75A Mech
5.1. Size:660K diodes
zxmn6a08k.pdf
A Product Line ofDiodes IncorporatedZXMN6A08K60V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 80m @ VGS= 10V 7.90A 60V 150m @ VGS= 4.5V 5.75A Mech
6.1. Size:446K diodes
zxmn6a08g.pdf
ZXMN6A08G60V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.080 @ VGS = 10V5.3600.150 @ VGS = 4.5V2.8DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resi
6.2. Size:652K diodes
zxmn6a08e6tc zxmn6a08e6 zxmn6a08e6ta.pdf
A Product Line ofDiodes IncorporatedZXMN6A08E660V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Low gate drive 80m @ VGS=10V 3.5A Low threshold100V Green component and RoHS compliant (Note 1) 150m @ VGS=4.5V 2.5A Qualified to AEC-Q101 S
6.3. Size:568K diodes
zxmn6a08e6.pdf
ZXMN6A08E6 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Fast Switching Speed TA = +25C Low Gate Drive 80m @ VGS=10V 3.5A 60V Low Threshold 150m @ VGS=4.5V 2.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3
6.4. Size:458K diodes
zxmn6a08e6q.pdf
ZXMN6A08E6Q 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Fast Switching Speed TA = +25C Low Gate Drive 80m @ VGS=10V 3.5A 60V Low Threshold 150m @ VGS=4.5V 2.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note
6.5. Size:444K zetex
zxmn6a08gta.pdf
ZXMN6A08G60V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.080 @ VGS = 10V5.3600.150 @ VGS = 4.5V2.8DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resi
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