Справочник MOSFET. ZXMN6A08KTC

 

ZXMN6A08KTC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ZXMN6A08KTC
   Маркировка: ZXMN6A08
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 8.94 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 3.8 nC
   trⓘ - Время нарастания: 2.1 ns
   Cossⓘ - Выходная емкость: 44.2 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для ZXMN6A08KTC

 

 

ZXMN6A08KTC Datasheet (PDF)

 ..1. Size:657K  diodes
 zxmn6a08ktc.pdf

ZXMN6A08KTC ZXMN6A08KTC

A Product Line ofDiodes IncorporatedZXMN6A08K60V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 80m @ VGS= 10V 7.90A 60V 150m @ VGS= 4.5V 5.75A Mech

 5.1. Size:660K  diodes
 zxmn6a08k.pdf

ZXMN6A08KTC ZXMN6A08KTC

A Product Line ofDiodes IncorporatedZXMN6A08K60V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 80m @ VGS= 10V 7.90A 60V 150m @ VGS= 4.5V 5.75A Mech

 6.1. Size:446K  diodes
 zxmn6a08g.pdf

ZXMN6A08KTC ZXMN6A08KTC

ZXMN6A08G60V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.080 @ VGS = 10V5.3600.150 @ VGS = 4.5V2.8DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resi

 6.2. Size:652K  diodes
 zxmn6a08e6tc zxmn6a08e6 zxmn6a08e6ta.pdf

ZXMN6A08KTC ZXMN6A08KTC

A Product Line ofDiodes IncorporatedZXMN6A08E660V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Low gate drive 80m @ VGS=10V 3.5A Low threshold100V Green component and RoHS compliant (Note 1) 150m @ VGS=4.5V 2.5A Qualified to AEC-Q101 S

 6.3. Size:568K  diodes
 zxmn6a08e6.pdf

ZXMN6A08KTC ZXMN6A08KTC

ZXMN6A08E6 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Fast Switching Speed TA = +25C Low Gate Drive 80m @ VGS=10V 3.5A 60V Low Threshold 150m @ VGS=4.5V 2.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3

 6.4. Size:458K  diodes
 zxmn6a08e6q.pdf

ZXMN6A08KTC ZXMN6A08KTC

ZXMN6A08E6Q 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Fast Switching Speed TA = +25C Low Gate Drive 80m @ VGS=10V 3.5A 60V Low Threshold 150m @ VGS=4.5V 2.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note

 6.5. Size:444K  zetex
 zxmn6a08gta.pdf

ZXMN6A08KTC ZXMN6A08KTC

ZXMN6A08G60V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.080 @ VGS = 10V5.3600.150 @ VGS = 4.5V2.8DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resi

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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