All MOSFET. ZXMN7A11GTA Datasheet

 

ZXMN7A11GTA Datasheet and Replacement


   Type Designator: ZXMN7A11GTA
   Marking Code: ZXMN7A11
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 2.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 4.35 nC
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT-223
 

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ZXMN7A11GTA Datasheet (PDF)

 ..1. Size:415K  zetex
zxmn7a11gta.pdf pdf_icon

ZXMN7A11GTA

ZXMN7A11G70V N-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.13 ID=3.8A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistance Fast

 5.1. Size:417K  diodes
zxmn7a11g.pdf pdf_icon

ZXMN7A11GTA

ZXMN7A11G70V N-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.13 ID=3.8A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistance Fast

 6.1. Size:524K  diodes
zxmn7a11k.pdf pdf_icon

ZXMN7A11GTA

ZXMN7A11K70V N-channel enhancement mode MOSFETSummary V(BR)DSS=70V : RDS(on)=0.13 ID=6.1A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistance Fa

 6.2. Size:520K  zetex
zxmn7a11ktc.pdf pdf_icon

ZXMN7A11GTA

ZXMN7A11K70V N-channel enhancement mode MOSFETSummary V(BR)DSS=70V : RDS(on)=0.13 ID=6.1A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistance Fa

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AON3611

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