2N7275D Datasheet and Replacement
Type Designator: 2N7275D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 120(max) nC
tr ⓘ - Rise Time: 140(max) nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO205AF
2N7275D substitution
2N7275D Datasheet (PDF)
jansr2n7275.pdf

JANSR2N7275Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 5A, 200V, rDS(ON) = 0.500 The Intersil Corporation has designed a series of SECONDGENERATION hardened power MOSFETs of both N-Chan- Total Dosenel and P-Channel enhancement types with ratings from100V to 500V, 1A to 60A, and on resistance as low as- Meets Pre
2n7272 2n7275 2n7278 2n7281.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall MIL-PRF-19500/604Bbe completed by 30 November 2004. 30 July 2004 SUPERSEDINGMIL-PRF-19500/604A21 June 1999PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES
Datasheet: 2N7272H2 , 2N7272H3 , 2N7272H4 , 2N7272R , 2N7272R1 , 2N7272R2 , 2N7272R3 , 2N7272R4 , IRF840 , 2N7275H , 2N7275R , 2SJ128 , 2SJ132 , 2SJ133 , 2SJ134 , 2SJ135 , 2SJ136 .
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