ZXMP3F30FHTA
MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXMP3F30FHTA
Marking Code: KPA
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.95
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 2.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 1.2
nC
trⓘ - Rise Time: 2.6
nS
Cossⓘ -
Output Capacitance: 72
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08
Ohm
Package:
SOT-23
ZXMP3F30FHTA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXMP3F30FHTA
Datasheet (PDF)
..1. Size:210K tysemi
zxmp3f30fh zxmp3f30fhta.pdf
Product specificationZXMP3F30FH 30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET Summary V(BR)DSS (V) RDS(on) () ID (A) 0.080 @ VGS= -10V -4.0-30 0.140 @ VGS= -4.5VDescription This new generation Trench MOSFET from TY has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance. Features Low on-resistance Fast swi
4.1. Size:1473K cn vbsemi
zxmp3f30fh.pdf
ZXMP3F30FHwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-
7.1. Size:244K diodes
zxmp3f35n8.pdf
ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET Summary V(BR)DSS (V) RDS(on) () ID(A) -30 0.012 @ VGS=-10V -17.10.018 @ VGS=-4.5VDescription This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for battery protection and reverse connection application
7.2. Size:247K diodes
zxmp3f36n8.pdf
ZXMP3F36N8 30V SO8 P-channel enhancement mode MOSFET Summary V(BR)DSS (V) RDS(on) () ID(A) -30 0.020 @ VGS=-10V -12.60.028 @ VGS=-4.5VDescription This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance. Features Low on-resistance SO8 package Applications B
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