All MOSFET. ZXMP3F30FHTA Datasheet

 

ZXMP3F30FHTA MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMP3F30FHTA
   Marking Code: KPA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.95 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.2 nC
   trⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SOT-23

 ZXMP3F30FHTA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMP3F30FHTA Datasheet (PDF)

 ..1. Size:210K  tysemi
zxmp3f30fh zxmp3f30fhta.pdf

ZXMP3F30FHTA ZXMP3F30FHTA

Product specificationZXMP3F30FH 30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET Summary V(BR)DSS (V) RDS(on) () ID (A) 0.080 @ VGS= -10V -4.0-30 0.140 @ VGS= -4.5VDescription This new generation Trench MOSFET from TY has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance. Features Low on-resistance Fast swi

 4.1. Size:1473K  cn vbsemi
zxmp3f30fh.pdf

ZXMP3F30FHTA ZXMP3F30FHTA

ZXMP3F30FHwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-

 7.1. Size:244K  diodes
zxmp3f35n8.pdf

ZXMP3F30FHTA ZXMP3F30FHTA

ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET Summary V(BR)DSS (V) RDS(on) () ID(A) -30 0.012 @ VGS=-10V -17.10.018 @ VGS=-4.5VDescription This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for battery protection and reverse connection application

 7.2. Size:247K  diodes
zxmp3f36n8.pdf

ZXMP3F30FHTA ZXMP3F30FHTA

ZXMP3F36N8 30V SO8 P-channel enhancement mode MOSFET Summary V(BR)DSS (V) RDS(on) () ID(A) -30 0.020 @ VGS=-10V -12.60.028 @ VGS=-4.5VDescription This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance. Features Low on-resistance SO8 package Applications B

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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