All MOSFET. ZXMS6004DGQ Datasheet

 

ZXMS6004DGQ MOSFET. Datasheet pdf. Equivalent

Type Designator: ZXMS6004DGQ

SMD Transistor Code: ZXMS6004D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.3 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 1 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 10 nS

Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm

Package: SOT-223

ZXMS6004DGQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

ZXMS6004DGQ Datasheet (PDF)

1.1. zxms6004dt8q.pdf Size:530K _upd-mosfet

ZXMS6004DGQ
ZXMS6004DGQ

ZXMS6004DT8Q 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET Product Summary Features and Benefits  Continuous Drain Source Voltage VDS = 60V  Compact Dual Package  On-State Resistance 500mΩ  Low Input Current  Nominal Load Current (VIN = 5V) 1.2A  Logic Level Input (3.3V and 5V)  Clamping Energy 210mJ  Short Circuit Protection with Auto

1.2. zxms6004dgq.pdf Size:425K _upd-mosfet

ZXMS6004DGQ
ZXMS6004DGQ

ZXMS6004DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE ® INTELLIFET MOSFET Product Summary Features and Benefits  Continuous Drain Source Voltage VDS= 60V  Compact High Power Dissipation Package  On-State Resistance 500mΩ  Low Input Current  Nominal load current (VIN = 5V) 1.3A  Logic Level Input (3.3V and 5V)  Clamping Energy 490mJ  Short Circuit P

 1.3. zxms6004dg.pdf Size:479K _diodes

ZXMS6004DGQ
ZXMS6004DGQ

A Product Line of Diodes Incorporated ZXMS6004DG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 m? Nominal load current (VIN = 5V) 1.3 A Clamping energy 490mJ Description The ZXMS6004DG is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-volt

1.4. zxms6004dt8.pdf Size:236K _diodes

ZXMS6004DGQ
ZXMS6004DGQ

A Product Line of Diodes Incorporated ZXMS6004DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 500 m? Nominal load current (VIN = 5V) 1.2 A Clamping Energy 210 mJ SM8 Package DESCRIPTION The ZXMS6004DT8 is a dual self protected low side MOSFET with logic level input. It integrates over-temp

Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .

 
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