Справочник MOSFET. ZXMS6004DGQ

 

ZXMS6004DGQ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: ZXMS6004DGQ

Маркировка: ZXMS6004D

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 1.3 W

Предельно допустимое напряжение сток-исток (Uds): 60 V

Пороговое напряжение включения Ugs(th): 1.5 V

Максимально допустимый постоянный ток стока (Id): 1 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 10 ns

Сопротивление сток-исток открытого транзистора (Rds): 0.5 Ohm

Тип корпуса: SOT-223

Аналог (замена) для ZXMS6004DGQ

 

 

ZXMS6004DGQ Datasheet (PDF)

1.1. zxms6004dt8q.pdf Size:530K _upd-mosfet

ZXMS6004DGQ
ZXMS6004DGQ

ZXMS6004DT8Q 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET Product Summary Features and Benefits  Continuous Drain Source Voltage VDS = 60V  Compact Dual Package  On-State Resistance 500mΩ  Low Input Current  Nominal Load Current (VIN = 5V) 1.2A  Logic Level Input (3.3V and 5V)  Clamping Energy 210mJ  Short Circuit Protection with Auto

1.2. zxms6004dgq.pdf Size:425K _upd-mosfet

ZXMS6004DGQ
ZXMS6004DGQ

ZXMS6004DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE ® INTELLIFET MOSFET Product Summary Features and Benefits  Continuous Drain Source Voltage VDS= 60V  Compact High Power Dissipation Package  On-State Resistance 500mΩ  Low Input Current  Nominal load current (VIN = 5V) 1.3A  Logic Level Input (3.3V and 5V)  Clamping Energy 490mJ  Short Circuit P

 1.3. zxms6004dg.pdf Size:479K _diodes

ZXMS6004DGQ
ZXMS6004DGQ

A Product Line of Diodes Incorporated ZXMS6004DG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 m? Nominal load current (VIN = 5V) 1.3 A Clamping energy 490mJ Description The ZXMS6004DG is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-volt

1.4. zxms6004dt8.pdf Size:236K _diodes

ZXMS6004DGQ
ZXMS6004DGQ

A Product Line of Diodes Incorporated ZXMS6004DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 500 m? Nominal load current (VIN = 5V) 1.2 A Clamping Energy 210 mJ SM8 Package DESCRIPTION The ZXMS6004DT8 is a dual self protected low side MOSFET with logic level input. It integrates over-temp

Другие MOSFET... ZXMP6A17GTA , ZXMP6A17KTC , ZXMP6A17N8TC , ZXMP6A18KTC , ZXMP7A17GQ , ZXMP7A17GTA , ZXMP7A17KTC , ZXMS6002GQ , IRFZ44V , ZXMS6004DT8Q , ZXMS6004FFQ , ZXMS6004SGQ , ZXMS6005DGQ , ZXMS6005DT8Q , ZXMS6005SGQ , ZXMS6006DGQ , ZXMS6006DT8Q .

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