All MOSFET. ZXMS6005DGQ Datasheet

 

ZXMS6005DGQ Datasheet and Replacement


   Type Designator: ZXMS6005DGQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: SOT-223
 

 ZXMS6005DGQ substitution

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ZXMS6005DGQ Datasheet (PDF)

 ..1. Size:242K  diodes
zxms6005dgq.pdf pdf_icon

ZXMS6005DGQ

ZXMS6005DGQ60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Protect

 0.1. Size:524K  diodes
zxms6005dgq-13.pdf pdf_icon

ZXMS6005DGQ

ZXMS6005DGQ-13 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-state Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.0A Logic Level Input (3.3V and 5V) Short Circuit Protection with Auto Restart

 4.1. Size:556K  diodes
zxms6005dg.pdf pdf_icon

ZXMS6005DGQ

A Product Line ofDiodes Incorporated ZXMS6005DG60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 2 A SOT223 PackageClamping Energy 490 mJ DESCRIPTION The ZXMS6005DG is a self protected low side MOSFET with logic Slevel input. It integrates over-te

 5.1. Size:247K  diodes
zxms6005dt8.pdf pdf_icon

ZXMS6005DGQ

A Product Line ofDiodes Incorporated ZXMS6005DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 1.8 A Clamping Energy 210 mJ SM8 PackageDESCRIPTION The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates ove

Datasheet: ZXMP7A17GQ , ZXMP7A17GTA , ZXMP7A17KTC , ZXMS6002GQ , ZXMS6004DGQ , ZXMS6004DT8Q , ZXMS6004FFQ , ZXMS6004SGQ , AO3400 , ZXMS6005DT8Q , ZXMS6005SGQ , ZXMS6006DGQ , ZXMS6006DT8Q , ZXMS6006SGQ , SI1002R , SI1011X , SI1012CR .

History: UF830KG-TN3-R | STD35NF3LLT4 | IXTT140N10P | SSF2341E | 6N80L-TF1-T | DMC4015SSD | AFN3484

Keywords - ZXMS6005DGQ MOSFET datasheet

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