Аналог (замена) для ZXMS6005DGQ

ZXMS6005DGQ Datasheet (PDF)

1.1. zxms6005dt8q.pdf Size:348K _upd-mosfet

ZXMS6005DT8Q Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact Dual Package • On-State Resistance 200mΩ • Low Input Current • Nominal Load Current (VIN = 5V) 1.8A • Logic Level Input (3.3V and 5V) • Clamping Energy 210mJ • Short Circuit Protection with Aut

1.2. zxms6005dgq.pdf Size:242K _upd-mosfet

ZXMS6005DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE ® INTELLIFET MOSFET Product Summary Features and Benefits  Continuous Drain Source Voltage 60V  Compact High Power Dissipation Package  On-State Resistance 200mΩ  Low Input Current  Nominal Load Current (VIN = 5V) 2.8A  Logic Level Input (3.3V and 5V)  Clamping Energy 490mJ  Short Circuit Protect

 1.3. zxms6005dt8.pdf Size:247K _diodes

A Product Line of Diodes Incorporated ZXMS6005DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET� MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m? Nominal load current (VIN = 5V) 1.8 A Clamping Energy 210 mJ SM8 Package DESCRIPTION The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates over-temp

1.4. zxms6005dg.pdf Size:556K _diodes

A Product Line of Diodes Incorporated ZXMS6005DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET� MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m? Nominal load current (VIN = 5V) 2 A SOT223 Package Clamping Energy 490 mJ DESCRIPTION The ZXMS6005DG is a self protected low side MOSFET with logic S level input. It integrates over-temperat

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