Справочник MOSFET. ZXMS6005DGQ

 

ZXMS6005DGQ Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMS6005DGQ
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 14 ns
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
   Тип корпуса: SOT-223
 

 Аналог (замена) для ZXMS6005DGQ

   - подбор ⓘ MOSFET транзистора по параметрам

 

ZXMS6005DGQ Datasheet (PDF)

 ..1. Size:242K  diodes
zxms6005dgq.pdfpdf_icon

ZXMS6005DGQ

ZXMS6005DGQ60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Protect

 0.1. Size:524K  diodes
zxms6005dgq-13.pdfpdf_icon

ZXMS6005DGQ

ZXMS6005DGQ-13 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-state Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.0A Logic Level Input (3.3V and 5V) Short Circuit Protection with Auto Restart

 4.1. Size:556K  diodes
zxms6005dg.pdfpdf_icon

ZXMS6005DGQ

A Product Line ofDiodes Incorporated ZXMS6005DG60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 2 A SOT223 PackageClamping Energy 490 mJ DESCRIPTION The ZXMS6005DG is a self protected low side MOSFET with logic Slevel input. It integrates over-te

 5.1. Size:247K  diodes
zxms6005dt8.pdfpdf_icon

ZXMS6005DGQ

A Product Line ofDiodes Incorporated ZXMS6005DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 1.8 A Clamping Energy 210 mJ SM8 PackageDESCRIPTION The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates ove

Другие MOSFET... ZXMP7A17GQ , ZXMP7A17GTA , ZXMP7A17KTC , ZXMS6002GQ , ZXMS6004DGQ , ZXMS6004DT8Q , ZXMS6004FFQ , ZXMS6004SGQ , AO3400 , ZXMS6005DT8Q , ZXMS6005SGQ , ZXMS6006DGQ , ZXMS6006DT8Q , ZXMS6006SGQ , SI1002R , SI1011X , SI1012CR .

History: LNTR4003NLT1G | SSM6P15FU | STD100N03LT4 | IXTK120N25P | STW75N60M6 | HGP059N08A | SWN7N65K2

 

 
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