All MOSFET. ZXMS6005SGQ Datasheet

 

ZXMS6005SGQ MOSFET. Datasheet pdf. Equivalent

Type Designator: ZXMS6005SGQ

SMD Transistor Code: ZXMS6005S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 2.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 14 nS

Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm

Package: SOT-223

ZXMS6005SGQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMS6005SGQ Datasheet (PDF)

1.1. zxms6005sgq.pdf Size:401K _upd-mosfet

ZXMS6005SGQ
ZXMS6005SGQ

ZXMS6005SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Features and Benefits  Continuous Drain Source Voltage VDS = 60V  Compact High Power Dissipation Package  On-State Resistance 200mΩ  Low Input Current  Nominal Load Current (VIN = 5V) 2A  Logic Level Input (3.3V and 5V)  Clamping Energy 480mJ  Short Circuit Pro

2.1. zxms6005dt8q.pdf Size:348K _upd-mosfet

ZXMS6005SGQ
ZXMS6005SGQ

ZXMS6005DT8Q Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact Dual Package • On-State Resistance 200mΩ • Low Input Current • Nominal Load Current (VIN = 5V) 1.8A • Logic Level Input (3.3V and 5V) • Clamping Energy 210mJ • Short Circuit Protection with Aut

2.2. zxms6005dgq.pdf Size:242K _upd-mosfet

ZXMS6005SGQ
ZXMS6005SGQ

ZXMS6005DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE ® INTELLIFET MOSFET Product Summary Features and Benefits  Continuous Drain Source Voltage 60V  Compact High Power Dissipation Package  On-State Resistance 200mΩ  Low Input Current  Nominal Load Current (VIN = 5V) 2.8A  Logic Level Input (3.3V and 5V)  Clamping Energy 490mJ  Short Circuit Protect

 2.3. zxms6005dt8.pdf Size:247K _diodes

ZXMS6005SGQ
ZXMS6005SGQ

A Product Line of Diodes Incorporated ZXMS6005DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m? Nominal load current (VIN = 5V) 1.8 A Clamping Energy 210 mJ SM8 Package DESCRIPTION The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates over-temp

2.4. zxms6005dg.pdf Size:556K _diodes

ZXMS6005SGQ
ZXMS6005SGQ

A Product Line of Diodes Incorporated ZXMS6005DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m? Nominal load current (VIN = 5V) 2 A SOT223 Package Clamping Energy 490 mJ DESCRIPTION The ZXMS6005DG is a self protected low side MOSFET with logic S level input. It integrates over-temperat

Datasheet: ZXMP7A17KTC , ZXMS6002GQ , ZXMS6004DGQ , ZXMS6004DT8Q , ZXMS6004FFQ , ZXMS6004SGQ , ZXMS6005DGQ , ZXMS6005DT8Q , IRFP4227 , ZXMS6006DGQ , ZXMS6006DT8Q , ZXMS6006SGQ , SI1002R , SI1011X , SI1012CR , SI1012R , SI1012X .

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