ZXMS6005SGQ - описание и поиск аналогов

 

ZXMS6005SGQ. Аналоги и основные параметры

Наименование производителя: ZXMS6005SGQ

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 14 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm

Тип корпуса: SOT-223

Аналог (замена) для ZXMS6005SGQ

- подборⓘ MOSFET транзистора по параметрам

 

ZXMS6005SGQ даташит

 ..1. Size:401K  diodes
zxms6005sgq.pdfpdf_icon

ZXMS6005SGQ

ZXMS6005SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS = 60V Compact High Power Dissipation Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2A Logic Level Input (3.3V and 5V) Clamping Energy 480mJ Short Circuit Pro

 6.1. Size:247K  diodes
zxms6005dt8.pdfpdf_icon

ZXMS6005SGQ

A Product Line of Diodes Incorporated ZXMS6005DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 1.8 A Clamping Energy 210 mJ SM8 Package DESCRIPTION The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates ove

 6.2. Size:242K  diodes
zxms6005dgq.pdfpdf_icon

ZXMS6005SGQ

ZXMS6005DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Protect

 6.3. Size:348K  diodes
zxms6005dt8q.pdfpdf_icon

ZXMS6005SGQ

ZXMS6005DT8Q Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact Dual Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 1.8A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Circuit Protection with Aut

Другие MOSFET... ZXMP7A17KTC , ZXMS6002GQ , ZXMS6004DGQ , ZXMS6004DT8Q , ZXMS6004FFQ , ZXMS6004SGQ , ZXMS6005DGQ , ZXMS6005DT8Q , IRFP260 , ZXMS6006DGQ , ZXMS6006DT8Q , ZXMS6006SGQ , SI1002R , SI1011X , SI1012CR , SI1012R , SI1012X .

 

 

 

 

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