ZXMS6005SGQ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ZXMS6005SGQ
Маркировка: ZXMS6005S
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1 W
Предельно допустимое напряжение сток-исток (Uds): 60 V
Пороговое напряжение включения Ugs(th): 1.5 V
Максимально допустимый постоянный ток стока (Id): 2.5 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 14 ns
Сопротивление сток-исток открытого транзистора (Rds): 0.2 Ohm
Тип корпуса: SOT-223
Аналог (замена) для ZXMS6005SGQ
ZXMS6005SGQ Datasheet (PDF)
1.1. zxms6005sgq.pdf 
Size:401K _upd-mosfet
ZXMS6005SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS = 60V Compact High Power Dissipation Package On-State Resistance 200mΩ Low Input Current Nominal Load Current (VIN = 5V) 2A Logic Level Input (3.3V and 5V) Clamping Energy 480mJ Short Circuit Pro
2.1. zxms6005dt8q.pdf Size:348K _upd-mosfet
ZXMS6005DT8Q Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact Dual Package • On-State Resistance 200mΩ • Low Input Current • Nominal Load Current (VIN = 5V) 1.8A • Logic Level Input (3.3V and 5V) • Clamping Energy 210mJ • Short Circuit Protection with Aut
2.2. zxms6005dgq.pdf Size:242K _upd-mosfet
ZXMS6005DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE ® INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 200mΩ Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Protect
2.3. zxms6005dt8.pdf Size:247K _diodes
A Product Line of Diodes Incorporated ZXMS6005DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m? Nominal load current (VIN = 5V) 1.8 A Clamping Energy 210 mJ SM8 Package DESCRIPTION The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates over-temp
2.4. zxms6005dg.pdf Size:556K _diodes
A Product Line of Diodes Incorporated ZXMS6005DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m? Nominal load current (VIN = 5V) 2 A SOT223 Package Clamping Energy 490 mJ DESCRIPTION The ZXMS6005DG is a self protected low side MOSFET with logic S level input. It integrates over-temperat
Другие MOSFET... ZXMP7A17KTC , ZXMS6002GQ , ZXMS6004DGQ , ZXMS6004DT8Q , ZXMS6004FFQ , ZXMS6004SGQ , ZXMS6005DGQ , ZXMS6005DT8Q , IRFP4227 , ZXMS6006DGQ , ZXMS6006DT8Q , ZXMS6006SGQ , SI1002R , SI1011X , SI1012CR , SI1012R , SI1012X .
Список транзисторов
Обновления
MOSFET: PSMNR90-30BL | PSMN9R8-30MLC | PSMN9R5-100BS | PSMN9R0-25MLC | PSMN8R7-80BS | PSMN8R5-108ES | PSMN8R5-100XS | PSMN8R5-100PS | PSMN8R5-100ES | PSMN8R0-40BS | PSMN7R8-120PS | PSMN7R8-120ES | PSMN7R8-100PSE | PSMN7R6-60XS | PSMN7R6-60BS |