ZXMS6005SGQ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ZXMS6005SGQ
Маркировка: ZXMS6005S
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1 W
Предельно допустимое напряжение сток-исток (Uds): 60 V
Пороговое напряжение включения Ugs(th): 1.5 V
Максимально допустимый постоянный ток стока (Id): 2.5 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 14 ns
Сопротивление сток-исток открытого транзистора (Rds): 0.2 Ohm
Тип корпуса: SOT-223
Аналог (замена) для ZXMS6005SGQ
ZXMS6005SGQ Datasheet (PDF)
1.1. zxms6005sgq.pdf 
Size:401K _upd-mosfet
ZXMS6005SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS = 60V Compact High Power Dissipation Package On-State Resistance 200mΩ Low Input Current Nominal Load Current (VIN = 5V) 2A Logic Level Input (3.3V and 5V) Clamping Energy 480mJ Short Circuit Pro
2.1. zxms6005dt8q.pdf Size:348K _upd-mosfet
ZXMS6005DT8Q Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact Dual Package • On-State Resistance 200mΩ • Low Input Current • Nominal Load Current (VIN = 5V) 1.8A • Logic Level Input (3.3V and 5V) • Clamping Energy 210mJ • Short Circuit Protection with Aut
2.2. zxms6005dgq.pdf Size:242K _upd-mosfet
ZXMS6005DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE ® INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 200mΩ Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Protect
2.3. zxms6005dt8.pdf Size:247K _diodes
A Product Line of Diodes Incorporated ZXMS6005DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m? Nominal load current (VIN = 5V) 1.8 A Clamping Energy 210 mJ SM8 Package DESCRIPTION The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates over-temp
2.4. zxms6005dg.pdf Size:556K _diodes
A Product Line of Diodes Incorporated ZXMS6005DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m? Nominal load current (VIN = 5V) 2 A SOT223 Package Clamping Energy 490 mJ DESCRIPTION The ZXMS6005DG is a self protected low side MOSFET with logic S level input. It integrates over-temperat
Другие MOSFET... SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 , PT4410 , IRFP260N , SI2301 , SI2305 , XP152A12COMR , AO3401 , AO3407 , PT4435 , SM103 , SM104 .
Список транзисторов
Обновления
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