All MOSFET. ZXMS6006SGQ Datasheet

 

ZXMS6006SGQ MOSFET. Datasheet pdf. Equivalent

Type Designator: ZXMS6006SGQ

SMD Transistor Code: ZXMS6006S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 18 nS

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: SOT-223

ZXMS6006SGQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

ZXMS6006SGQ Datasheet (PDF)

1.1. zxms6006sgq.pdf Size:311K _upd-mosfet

ZXMS6006SGQ
ZXMS6006SGQ

ZXMS6006SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact High Power Dissipation Package • On-State Resistance 100mΩ • Low Input Current • Nominal Load Current (VIN = 5V) 2.8A • Logic Level Input (3.3V and 5V) • Clamping Energy 480mJ • Short Circuit Protection

1.2. zxms6006sg.pdf Size:243K _diodes

ZXMS6006SGQ
ZXMS6006SGQ

A Product Line of Diodes Incorporated ZXMS6006SG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m? Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short circuit protection

 2.1. zxms6006dgq.pdf Size:340K _upd-mosfet

ZXMS6006SGQ
ZXMS6006SGQ

Green ZXMS6006DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact High Power Dissipation Package • On-State Resistance 100mΩ • Low Input Current • Nominal Load Current (VIN = 5V) 2.8A • Logic Level Input (3.3V and 5V) • Clamping Energy 490mJ • Short Circuit Pro

2.2. zxms6006dt8q.pdf Size:276K _upd-mosfet

ZXMS6006SGQ
ZXMS6006SGQ

Green ZXMS6006DT8Q 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE ® INTELLIFET MOSFET Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact High Power Dissipation Package • On-State Resistance 100mΩ • Low Input Current • Nominal Load Current (VIN = 5V) 2.8A • Logic Level Input (3.3V and 5V) • Clamping Energy 210mJ • Short Cir

 2.3. zxms6006dt8.pdf Size:267K _diodes

ZXMS6006SGQ
ZXMS6006SGQ

A Product Line of Diodes Incorporated ZXMS6006DT8 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m? Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short circuit prot

2.4. zxms6006dg.pdf Size:241K _diodes

ZXMS6006SGQ
ZXMS6006SGQ

A Product Line of Diodes Incorporated ZXMS6006DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m? Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short circuit protection

Datasheet: SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 , PT4410 , IRFP260N , SI2301 , SI2305 , XP152A12COMR , AO3401 , AO3407 , PT4435 , SM103 , SM104 .

 
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