ZXMS6006SGQ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ZXMS6006SGQ
Маркировка: ZXMS6006S
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1 W
Предельно допустимое напряжение сток-исток (Uds): 60 V
Пороговое напряжение включения Ugs(th): 1.5 V
Максимально допустимый постоянный ток стока (Id): 2 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 18 ns
Сопротивление сток-исток открытого транзистора (Rds): 0.1 Ohm
Тип корпуса: SOT-223
Аналог (замена) для ZXMS6006SGQ
ZXMS6006SGQ Datasheet (PDF)
1.1. zxms6006sgq.pdf 
Size:311K _upd-mosfet
ZXMS6006SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact High Power Dissipation Package • On-State Resistance 100mΩ • Low Input Current • Nominal Load Current (VIN = 5V) 2.8A • Logic Level Input (3.3V and 5V) • Clamping Energy 480mJ • Short Circuit Protection
1.2. zxms6006sg.pdf Size:243K _diodes
A Product Line of Diodes Incorporated ZXMS6006SG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m? Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short circuit protection
2.1. zxms6006dgq.pdf Size:340K _upd-mosfet
Green ZXMS6006DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact High Power Dissipation Package • On-State Resistance 100mΩ • Low Input Current • Nominal Load Current (VIN = 5V) 2.8A • Logic Level Input (3.3V and 5V) • Clamping Energy 490mJ • Short Circuit Pro
2.2. zxms6006dt8q.pdf Size:276K _upd-mosfet
Green ZXMS6006DT8Q 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE ® INTELLIFET MOSFET Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact High Power Dissipation Package • On-State Resistance 100mΩ • Low Input Current • Nominal Load Current (VIN = 5V) 2.8A • Logic Level Input (3.3V and 5V) • Clamping Energy 210mJ • Short Cir
2.3. zxms6006dt8.pdf Size:267K _diodes
A Product Line of Diodes Incorporated ZXMS6006DT8 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m? Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short circuit prot
2.4. zxms6006dg.pdf Size:241K _diodes
A Product Line of Diodes Incorporated ZXMS6006DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m? Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short circuit protection
Другие MOSFET... ZXMS6004DT8Q , ZXMS6004FFQ , ZXMS6004SGQ , ZXMS6005DGQ , ZXMS6005DT8Q , ZXMS6005SGQ , ZXMS6006DGQ , ZXMS6006DT8Q , J111 , SI1002R , SI1011X , SI1012CR , SI1012R , SI1012X , SI1013CX , SI1013R , SI1013X .
