Справочник MOSFET. ZXMS6006SGQ

 

ZXMS6006SGQ Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMS6006SGQ
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 18 ns
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: SOT-223
 

 Аналог (замена) для ZXMS6006SGQ

   - подбор ⓘ MOSFET транзистора по параметрам

 

ZXMS6006SGQ Datasheet (PDF)

 ..1. Size:311K  diodes
zxms6006sgq.pdfpdf_icon

ZXMS6006SGQ

ZXMS6006SGQ60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 100m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 480mJ Short Circuit Protection

 4.1. Size:243K  diodes
zxms6006sg.pdfpdf_icon

ZXMS6006SGQ

A Product Line of Diodes IncorporatedZXMS6006SG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short

 6.1. Size:276K  diodes
zxms6006dt8q.pdfpdf_icon

ZXMS6006SGQ

GreenZXMS6006DT8Q60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 100m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Cir

 6.2. Size:241K  diodes
zxms6006dg.pdfpdf_icon

ZXMS6006SGQ

A Product Line of Diodes IncorporatedZXMS6006DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short

Другие MOSFET... ZXMS6004DT8Q , ZXMS6004FFQ , ZXMS6004SGQ , ZXMS6005DGQ , ZXMS6005DT8Q , ZXMS6005SGQ , ZXMS6006DGQ , ZXMS6006DT8Q , IRF9540N , SI1002R , SI1011X , SI1012CR , SI1012R , SI1012X , SI1013CX , SI1013R , SI1013X .

History: BSD235C | ZXM62N03G | IXTK17N120L | RFH25P10 | AP04N60H-HF | SM7003NSFH | P0460ED

 

 
Back to Top

 


 
.