SI1013X PDF and Equivalents Search

 

SI1013X Specs and Replacement

Type Designator: SI1013X

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V

|Id| ⓘ - Maximum Drain Current: 0.35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: SC-89

SI1013X substitution

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SI1013X datasheet

 ..1. Size:217K  vishay
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SI1013X

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SI1013X

Si1013CX Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.760 at VGS = - 4.5 V - 0.45 100 % Rg Tested 1.040 at VGS = - 2.5 V - 0.40 1 nC - 20 Typical ESD protection 1000 V (HBM) 1.5 at VGS = - 1.8 V - 1.5 Fast Switchin... See More ⇒

 8.3. Size:350K  cn tech public
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SI1013X

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Detailed specifications: ZXMS6006SGQ, SI1002R, SI1011X, SI1012CR, SI1012R, SI1012X, SI1013CX, SI1013R, AON6380, SI1016CX, SI1021R, SI1022R, SI1023CX, SI1023X, SI1025X, SI1026X, SI1028X

Keywords - SI1013X MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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