SI1036X PDF and Equivalents Search

 

SI1036X Specs and Replacement

Type Designator: SI1036X

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.22 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.61 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm

Package: SC-89

SI1036X substitution

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SI1036X datasheet

 ..1. Size:199K  vishay
si1036x.pdf pdf_icon

SI1036X

Si1036X www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) 100 % Rg tested 0.540 at VGS = 4.5 V 0.5 Gate-source ESD protected 1000 V 0.600 at VGS = 2.5 V 0.2 30 0.72 nC Material categorization 0.700 at VGS = 1.8 V 0.2 For definitions of compliance please s... See More ⇒

 9.1. Size:110K  vishay
si1031r-x.pdf pdf_icon

SI1036X

Si1031R/X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 8 at VGS = - 4.5 V - 150 High-Side Switching Low On-Resistance 8 12 at VGS = - 2.5 V - 125 - 20 Low Threshold 0.9 V (typ.) 15 at VGS = - 1.8 V - 100 Fast Switching Speed 45 ns 20 a... See More ⇒

 9.2. Size:132K  vishay
si1031x.pdf pdf_icon

SI1036X

Si1031R/X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 8 at VGS = - 4.5 V - 150 High-Side Switching Low On-Resistance 8 12 at VGS = - 2.5 V - 125 - 20 Low Threshold 0.9 V (typ.) 15 at VGS = - 1.8 V - 100 Fast Switching Speed 45 ns 20 a... See More ⇒

 9.3. Size:109K  vishay
si1033x.pdf pdf_icon

SI1036X

Si1033X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 8 at VGS = - 4.5 V - 150 TrenchFET Power MOSFET 1.5 V Rated 12 at VGS = - 2.5 V - 125 High-Side Switching - 20 Low On-Resistance 8 15 at VGS = - 1.8 V - 100 Low Threshold 0.9 V (ty... See More ⇒

Detailed specifications: SI1028X, SI1029X, SI1031R, SI1031X, SI1032R, SI1032X, SI1034CX, SI1035X, RFP50N06, SI1037X, SI1039X, SI1040X, SI1046R, SI1046X, SI1050X, SI1051X, SI1054X

Keywords - SI1036X MOSFET specs

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