Справочник MOSFET. SI1036X

 

SI1036X MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SI1036X
   Маркировка: B
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.22 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.61 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 9 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.54 Ohm
   Тип корпуса: SC-89

 Аналог (замена) для SI1036X

 

 

SI1036X Datasheet (PDF)

 ..1. Size:199K  vishay
si1036x.pdf

SI1036X
SI1036X

Si1036Xwww.vishay.comVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) 100 % Rg tested0.540 at VGS = 4.5 V 0.5 Gate-source ESD protected: 1000 V0.600 at VGS = 2.5 V 0.230 0.72 nC Material categorization:0.700 at VGS = 1.8 V 0.2For definitions of compliance please s

 9.1. Size:110K  vishay
si1031r-x.pdf

SI1036X
SI1036X

Si1031R/XVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (mA)Definition8 at VGS = - 4.5 V - 150 High-Side Switching Low On-Resistance: 8 12 at VGS = - 2.5 V - 125- 20 Low Threshold: 0.9 V (typ.)15 at VGS = - 1.8 V - 100 Fast Switching Speed: 45 ns20 a

 9.2. Size:132K  vishay
si1031x.pdf

SI1036X
SI1036X

Si1031R/XVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (mA)Definition8 at VGS = - 4.5 V - 150 High-Side Switching Low On-Resistance: 8 12 at VGS = - 2.5 V - 125- 20 Low Threshold: 0.9 V (typ.)15 at VGS = - 1.8 V - 100 Fast Switching Speed: 45 ns20 a

 9.3. Size:109K  vishay
si1033x.pdf

SI1036X
SI1036X

Si1033XVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (mA)Definition8 at VGS = - 4.5 V - 150 TrenchFET Power MOSFET: 1.5 V Rated12 at VGS = - 2.5 V - 125 High-Side Switching - 20 Low On-Resistance: 8 15 at VGS = - 1.8 V - 100 Low Threshold: 0.9 V (ty

 9.4. Size:170K  vishay
si1032r.pdf

SI1036X
SI1036X

Si1032R/XVishay SiliconixN-Channel 1.5 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (mA)Definition5 at VGS = 4.5 V 200 Low-Side Switching Low On-Resistance: 5 7 at VGS = 2.5 V 17520 Low Threshold: 0.9 V (typ.)9 at VGS = 1.8 V 150 Fast Switching Speed: 35 ns10 at VGS = 1.5 V

 9.5. Size:109K  vishay
si1034x.pdf

SI1036X
SI1036X

Si1034XVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (mA)Definition5 at VGS = 4.5 V 200 TrenchFET Power MOSFET: 1.5 V Rated7 at VGS = 2.5 V 175 Low-Side Switching20 Low On-Resistance: 5 9 at VGS = 1.8 V 150 Low Threshold: 0.9 V (typ.)10 at VGS = 1

 9.6. Size:108K  vishay
si1037x.pdf

SI1036X
SI1036X

Si1037XVishay SiliconixP-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.195 at VGS = - 4.5 V - 0.84 TrenchFET Power MOSFET0.260 at VGS = - 2.5 V - 20 - 0.73 Low Threshold0.350 at VGS = - 1.8 V - 0.64 Smallest LITTLE FOOT Package: 1.6 mm x 1.6 mm Low 0.6

 9.7. Size:196K  vishay
si1032r si1032x.pdf

SI1036X
SI1036X

Si1032R/XVishay SiliconixN-Channel 1.5 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (mA)Definition5 at VGS = 4.5 V 200 Low-Side Switching Low On-Resistance: 5 7 at VGS = 2.5 V 17520 Low Threshold: 0.9 V (typ.)9 at VGS = 1.8 V 150 Fast Switching Speed: 35 ns10 at VGS = 1.5 V

 9.8. Size:79K  vishay
si1032r-x.pdf

SI1036X
SI1036X

Si1032R/XVishay SiliconixN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (mA)1.5-V Rated5 @ VGS = 4.5 V2007 @ VGS = 2.5 V 17520209 @ VGS = 1.8 V 15010 @ VGS = 1.5 V 50FEATURES BENEFITS APPLICATIONSD Low-Side Switching D Ease in Driving Switches D Drivers: Relays, Solenoids, Lamps,Hammers, Displays, MemoriesD Low On-Resistance: 5 W D Low Offset (E

 9.9. Size:134K  vishay
si1031r.pdf

SI1036X
SI1036X

Si1031R/XVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (mA)Definition8 at VGS = - 4.5 V - 150 High-Side Switching Low On-Resistance: 8 12 at VGS = - 2.5 V - 125- 20 Low Threshold: 0.9 V (typ.)15 at VGS = - 1.8 V - 100 Fast Switching Speed: 45 ns20 a

 9.10. Size:127K  vishay
si1035x.pdf

SI1036X
SI1036X

Si1035XVishay SiliconixComplementary N- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (mA)Definition5 at VGS = 4.5 V 200 TrenchFET Power MOSFET: 1.5 V Rated7 at VGS = 2.5 V 175 Very Small FootprintN-Channel 20 High-Side Switching9 at VGS = 1.8 V 150 Low On-Resista

 9.11. Size:69K  vishay
si1031r si1031x.pdf

SI1036X
SI1036X

Si1031R/XNew ProductVishay Siliconix P-Channel 20-V (D-S) MOSFETPRODUCT SUMMARY1.5-V RatedVDS (V) rDS(on) (W) ID (mA)8 @ VGS = -4.5 V-15012 @ VGS = -2.5 V -125-20-2015 @ VGS = -1.8 V -10020 @ VGS = -1.5 V -30FEATURES BENEFITS APPLICATIONSD High-Side Switching D Ease in Driving Switches D Drivers: Relays, Solenoids, Lamps,Hammers, Displays, MemoriesD Low On-Resi

 9.12. Size:147K  vishay
si1034cx.pdf

SI1036X
SI1036X

Si1034CXVishay SiliconixDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % Rg Tested0.396 at VGS = 4.5 V 0.5 Gate-Source ESD Protected: 1000 V Material categorization:0.456 at VGS = 2.5 V 0.2For definitions of compliance please see20 0.750.546 at VGS = 1.8 V 0.2www.vishay.com/do

 9.13. Size:110K  vishay
si1039x.pdf

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SI1036X

Si1039XVishay SiliconixP-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.165 at VGS = - 4.5 V - 0.95 TrenchFET Power MOSFET0.220 at VGS = - 2.5 V - 12 - 0.82 Low Threshold0.280 at VGS = - 1.8 V - 0.67 Smallest LITTLE FOOT Package: 1.6 mm x 1.6 mm Low 0.6

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BF964

 

 
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