SI1058X PDF and Equivalents Search

 

SI1058X Specs and Replacement

Type Designator: SI1058X

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.236 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.091 Ohm

Package: SC-89

SI1058X substitution

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SI1058X datasheet

 ..1. Size:140K  vishay
 si1058x.pdf pdf_icon

SI1058X

Si1058X Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.091 at VGS = 4.5 V Material categorization 1.3a 20 3.5 For definitions of compliance please see 0.124 at VGS = 2.5 V 1.1 www.vishay.com/doc?99912 APPLICATIONS Load Switch for Portable Devices ... See More ⇒

 9.1. Size:122K  vishay
 si1051x.pdf pdf_icon

SI1058X

Si1051X Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.122 at VGS = - 4.5 V 1.2 TrenchFET Power MOSFET 0.141 at VGS = - 2.5 V 1.1 100 % Rg Tested - 8 5.91 0.168 at VGS = - 1.8 V 0.60 Compliant to RoHS Directive 2002/95/EC 0.198 at VGS = - 1.5... See More ⇒

 9.2. Size:136K  vishay
 si1054x.pdf pdf_icon

SI1058X

Si1054X Vishay Siliconix N-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.095 at VGS = 4.5 V 1.32 TrenchFET Power MOSFET 12 0.104 at VGS = 2.5 V 1.26 5.25 100 % Rg Tested 0.114 at VGS = 1.8 V 0.88 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Swi... See More ⇒

 9.3. Size:121K  vishay
 si1050x.pdf pdf_icon

SI1058X

Si1050X Vishay Siliconix N-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.086 at VGS = 4.5 V 1.34a TrenchFET Power MOSFET 100 % Rg Tested 0.093 at VGS = 2.5 V 1.29 8 7.1 Compliant to RoHS Directive 2002/95/EC 0.102 at VGS = 1.8 V 1.23 0.120 at VGS = 1.5 V ... See More ⇒

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Detailed specifications: SI1039X, SI1040X, SI1046R, SI1046X, SI1050X, SI1051X, SI1054X, SI1056X, 8N60, SI1062X, SI1065X, SI1067X, SI1069X, SI1070X, SI1071X, SI1072X, SI1073X

Keywords - SI1058X MOSFET specs

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