All MOSFET. SI1315DL Datasheet

 

SI1315DL MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI1315DL
   Marking Code: LJ*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.8 V
   |Id|ⓘ - Maximum Drain Current: 0.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.9 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.336 Ohm
   Package: SOT-323

 SI1315DL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI1315DL Datasheet (PDF)

 ..1. Size:242K  vishay
 si1315dl.pdf

SI1315DL SI1315DL

New ProductSi1315DLVishay SiliconixP-Channel 8 V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY DefinitionVDS (V) RDS(on) ()ID (A)c Qg (Typ.) TrenchFET Power MOSFET0.336 at VGS = - 4.5 V - 0.9 100 % Rg Tested- 8 0.450 at VGS = - 2.5 V - 0.7 1 nC Compliant to RoHS Directive 2002/95/EC0.650 at VGS = - 1.8 V - 0.5APP

 9.1. Size:242K  vishay
 si1317dl.pdf

SI1315DL SI1315DL

New ProductSi1317DLVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.150 at VGS = - 4.5 V - 1.4 TrenchFET Power MOSFET- 20 0.192 at VGS = - 2.5 V - 1.3 4.3 nC 100 % Rg Tested0.270 at VGS = - 1.8 V - 1.1 Compliant to RoHS Directive 2002/95/EC

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TPC8121 | GSM4900W | WMB025N06LG4 | SDFC30JAA

 

 
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