SI1426DH
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI1426DH
Marking Code: AC*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 2.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 1.9
nC
trⓘ - Rise Time: 12
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075
Ohm
Package:
SOT-363
SI1426DH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI1426DH
Datasheet (PDF)
..1. Size:242K vishay
si1426dh.pdf 
Si1426DHVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.075 at VGS = 10 V 3.6 TrenchFET Power MOSFET300.115 at VGS = 4.5 V 2.9 Thermally Enhanced SC-70 Package PWM Optimized Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Boost Conve
9.1. Size:261K vishay
si1422dh.pdf
New ProductSi1422DHVishay SiliconixN-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.026 at VGS = 4.5 V 4 TrenchFET Power MOSFET 100 % Rg Tested12 0.030 at VGS = 2.5 V 4 7.5 nC Compliant to RoHS Directive 2002/95/EC0.036 at VGS = 1.8 V 4APPLICATIONS Loa
9.2. Size:262K vishay
si1428edh.pdf
New ProductSi1428EDHVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.045 at VGS = 10 V 4 TrenchFET Power MOSFET30 0.049 at VGS = 4.5 V 4 4 nC Typical ESD Protection 2000 V HBM0.060 at VGS = 2.5 V 4 100 % Rg Tested Compliant to RoHS Dire
9.3. Size:261K vishay
si1424edh.pdf
New ProductSi1424EDHVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.033 at VGS = 4.5 V 4 TrenchFET Power MOSFET0.038 at VGS = 2.5 V 4 Typical ESD Protection 4000 V20 6 nC0.045 at VGS = 1.8 V 4 100 % Rg Tested Compliant to RoHS Direct
9.4. Size:259K vishay
si1427edh.pdf
New ProductSi1427EDHVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.064 at VGS = - 4.5 V - 2.0e TrenchFET Power MOSFET0.085 at VGS = - 2.5 V - 2.0e 100 % Rg Tested- 20 7.6 nC0.110 at VGS = - 1.8 V - 2.0e Typical ESD Performance 2000 V
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