SI1442DH Datasheet and Replacement
Type Designator: SI1442DH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 323 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOT-363
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SI1442DH Datasheet (PDF)
si1442dh.pdf

New ProductSi1442DHVishay SiliconixN-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A)a Qg (Typ.) 100 % Rg Tested0.020 at VGS = 4.5 V 4 Material categorization:For definitions of compliance please see12 0.024 at VGS = 2.5 V 4 13.1 nCwww.vishay.com/doc?999120.030 at VGS = 1.8 V 4APPLICATIONS L
si1443edh.pdf

New Product Si1443EDHVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) Typical ESD Performance 1500 V HBM 100 % Rg Tested0.054 at VGS = - 10 V - 4a Material categorization:- 30 0.062 at VGS = - 4.5 V - 4a 8.6 nCFor definitions of compliance please see0.085 at VGS = - 2.5 V -
si1441edh.pdf

New ProductSi1441EDHVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.041 at VGS = - 4.5 V - 4 TrenchFET Power MOSFET- 20 0.054 at VGS = - 2.5 V - 4 12.5 nC Typical ESD Performance 1500 V 100 % Rg Tested0.100 at VGS = - 1.8 V - 4 Compli
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: WMM11N80M3 | RFP2N10L | IRFI7536G | AM2314NE | FDMS9620S
Keywords - SI1442DH MOSFET datasheet
SI1442DH cross reference
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History: WMM11N80M3 | RFP2N10L | IRFI7536G | AM2314NE | FDMS9620S



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