SI1488DH Datasheet and Replacement
Type Designator: SI1488DH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
Package: SOT-363
SI1488DH Datasheet (PDF)
si1488dh.pdf

Si1488DHVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.049 at VGS = 4.5 V 6.1a TrenchFET Power MOSFET20 0.056 at VGS = 2.5 V 5.7 6.0 100 % Rg and UIS Tested0.065 at VGS = 1.8 V 5.3 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSSOT-363
si1480dh.pdf

Si1480DHVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.200 at VGS = 10 V 2.6aFor definitions of compliance please see100 1.80.320 at VGS = 4.5 V 2.2www.vishay.com/doc?99912APPLICATIONS Load Switches DC/DC Co
si1489edh.pdf

New ProductSi1489EDHVishay SiliconixP-Channel 8 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.048 at VGS = - 4.5 V - 2.0e TrenchFET Power MOSFET0.059 at VGS = - 2.5 V - 2.0e 100 % Rg Tested0.073 at VGS = - 1.8 V - 2.0e 10.5 nC- 8 Typical ESD Performance 2000 V in HB
Datasheet: SI1443EDH , SI1450DH , SI1467DH , SI1469DH , SI1470DH , SI1471DH , SI1473DH , SI1480DH , K4145 , SI1489EDH , SI1499DH , SI1539CDL , SI1551DL , SI1553CDL , SI1555DL , SI1563DH , SI1563EDH .
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