SI1488DH
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI1488DH
Marking Code: AG*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95
V
|Id|ⓘ - Maximum Drain Current: 4.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 45
nS
Cossⓘ -
Output Capacitance: 100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.049
Ohm
Package:
SOT-363
SI1488DH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI1488DH
Datasheet (PDF)
..1. Size:110K vishay
si1488dh.pdf
Si1488DHVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.049 at VGS = 4.5 V 6.1a TrenchFET Power MOSFET20 0.056 at VGS = 2.5 V 5.7 6.0 100 % Rg and UIS Tested0.065 at VGS = 1.8 V 5.3 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSSOT-363
9.1. Size:244K vishay
si1480dh.pdf
Si1480DHVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.200 at VGS = 10 V 2.6aFor definitions of compliance please see100 1.80.320 at VGS = 4.5 V 2.2www.vishay.com/doc?99912APPLICATIONS Load Switches DC/DC Co
9.2. Size:259K vishay
si1489edh.pdf
New ProductSi1489EDHVishay SiliconixP-Channel 8 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.048 at VGS = - 4.5 V - 2.0e TrenchFET Power MOSFET0.059 at VGS = - 2.5 V - 2.0e 100 % Rg Tested0.073 at VGS = - 1.8 V - 2.0e 10.5 nC- 8 Typical ESD Performance 2000 V in HB
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