All MOSFET. SI1539CDL Datasheet

 

SI1539CDL MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI1539CDL
   Marking Code: RG*
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 0.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.7 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.388 Ohm
   Package: SOT-363

 SI1539CDL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI1539CDL Datasheet (PDF)

 ..1. Size:238K  vishay
 si1539cdl.pdf

SI1539CDL SI1539CDL

Si1539CDLVishay SiliconixN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a Qg (Typ.)Definition0.388 at VGS = 10 V 0.7 TrenchFET Power MOSFETN-Channel 30 0.550.525 at VGS = 4.5 V 0.6 100 % Rg Tested0.890 at VGS = - 10 V - 0.5P-Channel - 30 0.8 APPLICATIONS1.7 at VGS = - 4.5

 0.1. Size:889K  cn vbsemi
 si1539cdl-t1.pdf

SI1539CDL SI1539CDL

SI1539CDL-T1www.VBsemi.twN- and P- Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.090 at VGS = 4.5 V 3.28 TrenchFET Power MOSFETs: 1.8 V RatedN-Channel 20 0.110 at VGS = 2.5 V 2.13 Thermally Enhanced SC-70 Package0.130 at VGS = 1.8 V 1.50 Fast Switching0.155 at VGS = - 4.5

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SWP10N50K

 

 
Back to Top