SI1563DH Datasheet and Replacement
Type Designator: SI1563DH
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 0.57 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 1.13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: SOT-363
SI1563DH substitution
SI1563DH Datasheet (PDF)
si1563dh.pdf
Si1563DHVishay SiliconixComplementary 20 V (D-S) Low-Threshold MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.280 at VGS = 4.5 V 1.28 TrenchFET Power MOSFETs: 1.8 V RatedN-Channel 20 0.360 at VGS = 2.5 V 1.13 Thermally Enhanced SC-70 Package0.450 at VGS = 1.8 V 1.00 Fast Switching0.490 at
si1563edh.pdf
Si1563EDHVishay SiliconixComplementary 20 V (D-S) Low-Threshold MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS: 1.8 V RatedVDS (V) RDS(on) ()ID (A) ESD Protected: 2000 V0.280 at VGS = 4.5 V 1.28 Thermally Enhanced SC-70 Package Material categorization:N-Channel 20 0.360 at VGS = 2.5 V 1.13For definitions of compliance please see0.450 at VGS =
si1563edh.pdf
SI1563EDHwww.VBsemi.twN- and P- Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.090 at VGS = 4.5 V 3.28 TrenchFET Power MOSFETs: 1.8 V RatedN-Channel 20 0.110 at VGS = 2.5 V 2.13 Thermally Enhanced SC-70 Package0.130 at VGS = 1.8 V 1.50 Fast Switching0.155 at VGS = - 4.5 V -
Datasheet: SI1480DH , SI1488DH , SI1489EDH , SI1499DH , SI1539CDL , SI1551DL , SI1553CDL , SI1555DL , AON7410 , SI1563EDH , SI1865DDL , SI1869DH , SI1902CDL , SI1917EDH , SI1922EDH , SI1926DL , SI1958DH .
History: 2N60F
Keywords - SI1563DH MOSFET datasheet
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History: 2N60F
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