All MOSFET. SI1926DL Datasheet

 

SI1926DL MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI1926DL
   Marking Code: PD*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 0.34 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.37 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 7.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: SOT-363

 SI1926DL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI1926DL Datasheet (PDF)

 ..1. Size:225K  vishay
 si1926dl.pdf

SI1926DL SI1926DL

Si1926DLVishay SiliconixDual N-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition1.4 at VGS = 10 V 0.37 TrenchFET Power MOSFET60 0.47 100 % Rg Tested3.0 at VGS = 4.5 V 0.25 ESD Protected: 1800 V Compliant to RoHS Directive 2002/95/ECAPPLICATIONSSOT-363

 9.1. Size:256K  vishay
 si1922edh.pdf

SI1926DL SI1926DL

Si1922EDHVishay SiliconixDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.198 at VGS = 4.5 V 1.3a 100 % Rg Tested20 0.225 at VGS = 2.5 V 1.3a 0.9 nC Typical ESD Protection 2100 V HBM0.263 at VGS = 1.8 V 1.3a Compliant to RoHS Di

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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