SI1926DL Specs and Replacement
Type Designator: SI1926DL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 7.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: SOT-363
SI1926DL substitution
SI1926DL datasheet
si1922edh.pdf
Si1922EDH Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.198 at VGS = 4.5 V 1.3a 100 % Rg Tested 20 0.225 at VGS = 2.5 V 1.3a 0.9 nC Typical ESD Protection 2100 V HBM 0.263 at VGS = 1.8 V 1.3a Compliant to RoHS Di... See More ⇒
Detailed specifications: SI1555DL , SI1563DH , SI1563EDH , SI1865DDL , SI1869DH , SI1902CDL , SI1917EDH , SI1922EDH , 5N65 , SI1958DH , SI1965DH , SI1967DH , SI1972DH , SI2202 , SI2300DS , SI2301CDS , SI2301-TP .
Keywords - SI1926DL MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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