All MOSFET. SI1926DL Datasheet

 

SI1926DL Datasheet and Replacement


   Type Designator: SI1926DL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.34 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 7.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: SOT-363
 
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SI1926DL Datasheet (PDF)

 ..1. Size:225K  vishay
 si1926dl.pdf pdf_icon

SI1926DL

Si1926DLVishay SiliconixDual N-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition1.4 at VGS = 10 V 0.37 TrenchFET Power MOSFET60 0.47 100 % Rg Tested3.0 at VGS = 4.5 V 0.25 ESD Protected: 1800 V Compliant to RoHS Directive 2002/95/ECAPPLICATIONSSOT-363

 9.1. Size:256K  vishay
 si1922edh.pdf pdf_icon

SI1926DL

Si1922EDHVishay SiliconixDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.198 at VGS = 4.5 V 1.3a 100 % Rg Tested20 0.225 at VGS = 2.5 V 1.3a 0.9 nC Typical ESD Protection 2100 V HBM0.263 at VGS = 1.8 V 1.3a Compliant to RoHS Di

Datasheet: SI1555DL , SI1563DH , SI1563EDH , SI1865DDL , SI1869DH , SI1902CDL , SI1917EDH , SI1922EDH , 4435 , SI1958DH , SI1965DH , SI1967DH , SI1972DH , SI2202 , SI2300DS , SI2301CDS , SI2301-TP .

History: SI3400A | 2SJ606-S

Keywords - SI1926DL MOSFET datasheet

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