SI1967DH MOSFET Datasheet: P-Ch, 20V, 1A. Full specification with pinout and replacement list

SI1967DH Specs and Replacement

Type Designator: SI1967DH

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 26 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.49 Ohm

Package: SOT-363

SI1967DH substitution

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SI1967DH datasheet

..1. Size:108K vishay
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Si1967DH Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.490 at VGS = - 4.5 V - 1.3a TrenchFET Power MOSFET PWM Optimized - 20 0.640 at VGS = - 2.5 V - 1.2 1.6 nC Compliant to RoHS Directive 2002/95/EC 0.790 at VGS = - 1.8 V - 1.0 APPLICATI... See More ⇒

0.1. Size:858K cn vbsemi
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SI1967DH-T1-GE3 www.VBsemi.tw Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.155 at VGS = - 4.5V - 1.8 TrenchFET Power MOSFET - 20 2.7 nC 0.235 at VGS = - 2.5 V - 1.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SC-70=-6 S1 S2 S1 1 6 D1 G1 G2 G1 ... See More ⇒

9.1. Size:108K vishay
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Si1965DH Vishay Siliconix Dual P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.390 at VGS = - 4.5 V - 1.3a TrenchFET Power MOSFET - 12 0.535 at VGS = - 2.5 V - 1.2 1.7 nC Compliant to RoHS Directive 2002/95/EC 0.710 at VGS = - 1.8 V - 1.1 APPLICATIONS Load Switch ... See More ⇒

9.2. Size:1453K cn vbsemi
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SI1965DH www.VBsemi.tw Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.155 at VGS = - 4.5V - 1.8 TrenchFET Power MOSFET - 20 2.7 nC 0.235 at VGS = - 2.5 V - 1.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SC-70=-6 S1 S2 S1 1 6 D1 G1 G2 G1 2 5 G2 ... See More ⇒

Detailed specifications: SI1865DDL, SI1869DH, SI1902CDL, SI1917EDH, SI1922EDH, SI1926DL, SI1958DH, SI1965DH, AON6380, SI1972DH, SI2202, SI2300DS, SI2301CDS, SI2301-TP, SI2302ADS, SI2302ADS-T1, SI2302CDS