All MOSFET. SI1967DH Datasheet

 

SI1967DH Datasheet and Replacement


   Type Designator: SI1967DH
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.49 Ohm
   Package: SOT-363
 

 SI1967DH substitution

   - MOSFET ⓘ Cross-Reference Search

 

SI1967DH Datasheet (PDF)

 ..1. Size:108K  vishay
si1967dh.pdf pdf_icon

SI1967DH

Si1967DHVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.490 at VGS = - 4.5 V - 1.3a TrenchFET Power MOSFET PWM Optimized- 20 0.640 at VGS = - 2.5 V - 1.2 1.6 nC Compliant to RoHS Directive 2002/95/EC0.790 at VGS = - 1.8 V - 1.0APPLICATI

 0.1. Size:858K  cn vbsemi
si1967dh-t1-ge3.pdf pdf_icon

SI1967DH

SI1967DH-T1-GE3www.VBsemi.twDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.155 at VGS = - 4.5V - 1.8 TrenchFET Power MOSFET- 20 2.7 nC0.235 at VGS = - 2.5 V - 1.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSC-70=-6S1 S2S1 1 6 D1G1 G2G1

 9.1. Size:108K  vishay
si1965dh.pdf pdf_icon

SI1967DH

Si1965DHVishay SiliconixDual P-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.390 at VGS = - 4.5 V - 1.3a TrenchFET Power MOSFET- 12 0.535 at VGS = - 2.5 V - 1.2 1.7 nC Compliant to RoHS Directive 2002/95/EC0.710 at VGS = - 1.8 V - 1.1APPLICATIONS Load Switch

 9.2. Size:1453K  cn vbsemi
si1965dh.pdf pdf_icon

SI1967DH

SI1965DHwww.VBsemi.twDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.155 at VGS = - 4.5V - 1.8 TrenchFET Power MOSFET- 20 2.7 nC0.235 at VGS = - 2.5 V - 1.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSC-70=-6S1 S2S1 1 6 D1G1 G2G1 2 5 G2

Datasheet: SI1865DDL , SI1869DH , SI1902CDL , SI1917EDH , SI1922EDH , SI1926DL , SI1958DH , SI1965DH , IRLZ44N , SI1972DH , SI2202 , SI2300DS , SI2301CDS , SI2301-TP , SI2302ADS , SI2302ADS-T1 , SI2302CDS .

History: PHB66NQ03LT | IRF7739L1 | DMP3020LSS

Keywords - SI1967DH MOSFET datasheet

 SI1967DH cross reference
 SI1967DH equivalent finder
 SI1967DH lookup
 SI1967DH substitution
 SI1967DH replacement

 

 
Back to Top

 


 
.