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..1. Size:108K vishay
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Si1967DH Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.490 at VGS = - 4.5 V - 1.3a TrenchFET Power MOSFET PWM Optimized - 20 0.640 at VGS = - 2.5 V - 1.2 1.6 nC Compliant to RoHS Directive 2002/95/EC 0.790 at VGS = - 1.8 V - 1.0 APPLICATI

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SI1967DH-T1-GE3 www.VBsemi.tw Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.155 at VGS = - 4.5V - 1.8 TrenchFET Power MOSFET - 20 2.7 nC 0.235 at VGS = - 2.5 V - 1.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SC-70=-6 S1 S2 S1 1 6 D1 G1 G2 G1

9.1. Size:108K vishay
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Si1965DH Vishay Siliconix Dual P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.390 at VGS = - 4.5 V - 1.3a TrenchFET Power MOSFET - 12 0.535 at VGS = - 2.5 V - 1.2 1.7 nC Compliant to RoHS Directive 2002/95/EC 0.710 at VGS = - 1.8 V - 1.1 APPLICATIONS Load Switch

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SI1965DH www.VBsemi.tw Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.155 at VGS = - 4.5V - 1.8 TrenchFET Power MOSFET - 20 2.7 nC 0.235 at VGS = - 2.5 V - 1.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SC-70=-6 S1 S2 S1 1 6 D1 G1 G2 G1 2 5 G2

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