All MOSFET. SI2302DDS Datasheet

 

SI2302DDS MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI2302DDS
   Marking Code: O2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.85 V
   |Id|ⓘ - Maximum Drain Current: 2.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.057 Ohm
   Package: SOT-23

 SI2302DDS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI2302DDS Datasheet (PDF)

 ..1. Size:204K  vishay
 si2302dds.pdf

SI2302DDS SI2302DDS

Si2302DDSVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition0.057 at VGS = 4.5 V 2.9 TrenchFET Power MOSFET20 3.50.075 at VGS = 2.5 V 100 % Rg Tested2.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switching for Portable Dev

 7.1. Size:257K  philips
 si2302ds.pdf

SI2302DDS SI2302DDS

SI2302DSN-channel enhancement mode field-effect transistorRev. 02 20 November 2001 Product dataM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:SI2302DS in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount packa

 7.2. Size:64K  vishay
 si2302ds.pdf

SI2302DDS SI2302DDS

Si2302DSVishay SiliconixN-Channel 1.25-W, 2.5-V MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.085 @ VGS = 4.5 V 2.820200.115 @ VGS = 2.5 V 2.4TO-236(SOT-23)G 13 DS 2Top ViewSi2302DS (A2)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 20VVGate-Source Voltage VGS "8TA= 25_

 7.3. Size:1471K  kexin
 si2302ds-3.pdf

SI2302DDS SI2302DDS

SMD Type MOSFETN-Channel Enhancement MOSFETSI2302DS (KI2302DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS=20V RDS(on)= 85m@VGS=4.5V ,ID=3.6A RDS(on)= 115m@VGS=2.5V ,ID=3.1A 1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Un

 7.4. Size:1142K  kexin
 si2302ds.pdf

SI2302DDS SI2302DDS

SMD Type MOSFETN-Channel Enhancement MOSFETSI2302DS (KI2302DS)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.1 Features3 VDS=20V RDS(on)= 85m@VGS=4.5V ,ID=3.6A RDS(on)= 115m@VGS=2.5V ,ID=3.1A1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr

 7.5. Size:876K  cn vbsemi
 si2302ds-t1-ge3.pdf

SI2302DDS SI2302DDS

SI2302DS-T1-GE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/D

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