SI3424BDV PDF and Equivalents Search

 

SI3424BDV Specs and Replacement

Type Designator: SI3424BDV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TSOP-6

SI3424BDV substitution

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SI3424BDV datasheet

 ..1. Size:204K  vishay
 si3424bdv.pdf pdf_icon

SI3424BDV

Si3424BDV Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.028 at VGS = 10 V 8a TrenchFET Power MOSFET 30 6.2 100 % Rg Tested 0.038 at VGS = 4.5 V 7 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Devices TSOP... See More ⇒

 6.1. Size:203K  vishay
 si3424bd.pdf pdf_icon

SI3424BDV

Si3424BDV Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.028 at VGS = 10 V 8a TrenchFET Power MOSFET 30 6.2 100 % Rg Tested 0.038 at VGS = 4.5 V 7 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Devices TSOP... See More ⇒

 8.1. Size:180K  vishay
 si3424dv.pdf pdf_icon

SI3424BDV

Si3424DV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.028 at VGS = 10 V 6.7 TrenchFET Power MOSFETs 30 0.038 at VGS = 4.5 V 5.7 Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View (1, 2, 5, 6) D 1 6 3 mm 5 2 (3) G 3 4 2.85 mm (4) S Ordering I... See More ⇒

 8.2. Size:211K  vishay
 si3424cdv.pdf pdf_icon

SI3424BDV

Si3424CDV Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, b Qg (Typ.) Definition 0.026 at VGS = 10 V TrenchFET Power MOSFET 8 30 4.2 100 % Rg Tested 0.032 at VGS = 4.5 V 8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Devices ... See More ⇒

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Detailed specifications: SI3139K, SI3404, SI3407DV, SI3410DV, SI3415, SI3417DV, SI3420, SI3421DV, IRF540N, SI3424CDV, SI3424DV, SI3429EDV, SI3430DV, SI3433CDV, SI3434, SI3434DV, SI3438DV

Keywords - SI3424BDV MOSFET specs

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