SI3442BDV MOSFET Datasheet: N-Ch, 20V, 3A. Full specification with pinout and replacement list

SI3442BDV Specs and Replacement

Type Designator: SI3442BDV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.86 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.057 Ohm

Package: TSOP-6

SI3442BDV substitution

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SI3442BDV datasheet

..1. Size:179K vishay
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Si3442BDV Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.057 at VGS = 4.5 V 4.2 TrenchFET Power MOSFET 20 0.090 at VGS = 2.5 V 3.4 Compliant to RoHS Directive 2002/95/EC TSOP-6 (1, 2, 5, 6) D Top View 1 6 3 mm 5 2 (3) G 3 4 2.85 mm (4) S Ordering... See More ⇒

6.1. Size:177K vishay
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8.1. Size:214K vishay
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Si3442CDV Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested Material categorization 0.027 at VGS = 10 V 8d For definitions of compliance please see 20 0.030 at VGS = 4.5 V 7.5 4.3 nC www.vishay.com/doc?99912 0.049 at VGS = 2.5 V 6.1 APPLICATIONS TSO... See More ⇒

8.2. Size:71K vishay
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March 2001 SI3442DV N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 4.1 A, 20 V. RDS(ON) = 0.06 @ VGS = 4.5 V effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.075 @ VGS =2.7 V. high cell density, DMOS technology. This very high density process is tai... See More ⇒