All MOSFET. SI3447CDV Datasheet

 

SI3447CDV MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI3447CDV
   Marking Code: AO*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 6.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.8 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TSOP-6

 SI3447CDV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI3447CDV Datasheet (PDF)

 ..1. Size:210K  vishay
 si3447cdv.pdf

SI3447CDV SI3447CDV

Si3447CDVVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = - 4.5 V - 7.8 TrenchFET Power MOSFET PWM Optimized0.050 at VGS = - 2.5 V - 6.6 12 nC- 12 Compliant to RoHS Directive 2002/95/EC0.068 at VGS = - 1.8 V - 5.6APPLICATIONS

 6.1. Size:209K  vishay
 si3447cd.pdf

SI3447CDV SI3447CDV

Si3447CDVVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = - 4.5 V - 7.8 TrenchFET Power MOSFET PWM Optimized0.050 at VGS = - 2.5 V - 6.6 12 nC- 12 Compliant to RoHS Directive 2002/95/EC0.068 at VGS = - 1.8 V - 5.6APPLICATIONS

 8.1. Size:47K  vishay
 si3447dv.pdf

SI3447CDV SI3447CDV

Si3447DVVishay SiliconixP-Channel 1.8-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.050 @ VGS = -4.5 V "5.2-12 0.070 @ VGS = -2.5 V "4.40.095 @ VGS = -1.8 V "3.8(4) STSOP-6Top View1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage V

 8.2. Size:181K  vishay
 si3447bdv.pdf

SI3447CDV SI3447CDV

Si3447BDVVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.040 at VGS = - 4.5 V - 6.0 TrenchFET Power MOSFET: 1.8 V Rated0.053 at VGS = - 2.5 V - 12 - 5.2 Ultra Low On-Resistance0.072 at VGS = - 1.8 V - 4.5 Compliant to RoHS Directive 2002/95/ECAPPL

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SFR9034TF | IRC8305 | 2SK1494 | SVSP11N65SD2

 

 
Back to Top