SI3447CDV - аналоги, параметры транзистора - Справочник транзисторов

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Si3447CDV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.036 at VGS = - 4.5 V - 7.8 TrenchFET Power MOSFET PWM Optimized 0.050 at VGS = - 2.5 V - 6.6 12 nC - 12 Compliant to RoHS Directive 2002/95/EC 0.068 at VGS = - 1.8 V - 5.6 APPLICATIONS

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Si3447DV Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.050 @ VGS = -4.5 V "5.2 -12 0.070 @ VGS = -2.5 V "4.4 0.095 @ VGS = -1.8 V "3.8 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage V

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Si3447BDV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.040 at VGS = - 4.5 V - 6.0 TrenchFET Power MOSFET 1.8 V Rated 0.053 at VGS = - 2.5 V - 12 - 5.2 Ultra Low On-Resistance 0.072 at VGS = - 1.8 V - 4.5 Compliant to RoHS Directive 2002/95/EC APPL

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