All MOSFET. SI3460DV Datasheet

 

SI3460DV Datasheet and Replacement


   Type Designator: SI3460DV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.45 V
   |Id| ⓘ - Maximum Drain Current: 5.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 13.5 nC
   tr ⓘ - Rise Time: 30 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TSOP-6
 

 SI3460DV substitution

   - MOSFET ⓘ Cross-Reference Search

 

SI3460DV Datasheet (PDF)

 ..1. Size:177K  vishay
 si3460dv.pdf pdf_icon

SI3460DV

Si3460DVVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.027 at VGS = 4.5 V 6.8 TrenchFET Power MOSFET0.032 at VGS = 2.5 V 20 6.3 100 % Rg Tested0.038 at VGS = 1.8 V 5.7 Compliant to RoHS directive 2002/95/ECTSOP-6(1, 2, 5, 6) DTop View1 6

 0.1. Size:862K  cn vbsemi
 si3460dv-t1.pdf pdf_icon

SI3460DV

SI3460DV-T1www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/

 7.1. Size:612K  vishay
 si3460dd si3460ddv.pdf pdf_icon

SI3460DV

Si3460DDVVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.028 at VGS = 4.5 V 7.9 TrenchFET Power MOSFET20 0.032 at VGS = 2.5 V 7.4 6.7 nC 100 % Rg Tested 100 % UIS Tested0.038 at VGS = 1.8 V 6.8 Compliant to RoHS Directive 2002/95/ECAPPL

 7.2. Size:612K  vishay
 si3460ddv.pdf pdf_icon

SI3460DV

Si3460DDVVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.028 at VGS = 4.5 V 7.9 TrenchFET Power MOSFET20 0.032 at VGS = 2.5 V 7.4 6.7 nC 100 % Rg Tested 100 % UIS Tested0.038 at VGS = 1.8 V 6.8 Compliant to RoHS Directive 2002/95/ECAPPL

SHOW MORE

Datasheet: SI3456BDV , SI3456CDV , SI3456DDV , SI3457BDV , SI3457CDV , SI3458BDV , SI3459BDV , SI3460DDV , IRF9540N , SI3464DV , SI3465DV , SI3467DV , SI3473CDV , SI3473DV , SI3474DV , SI3476DV , SI3477DV .

Keywords - SI3460DV MOSFET datasheet

 SI3460DV cross reference
 SI3460DV equivalent finder
 SI3460DV lookup
 SI3460DV substitution
 SI3460DV replacement

 

 
Back to Top

 


 
.